COLD PROBE SEMICONDUCTOR TYPE TESTER.DHAR S.1977; REV. SCI. INSTRUM.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 1720-1721; BIBL. 3 REF.Article

FORMATION D'UNE INSTABILITE LORS DU DEVELOPPEMENT LOCALISE DE LA CONDUCTIVITE DIFFERENTIELLE NEGATIVE DE TYPE N PAR DERIVE ET CONCENTRATIONPROKHOROV EF.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 8; PP. 1396-1398; BIBL. 7 REF.Article

LE CYCLE BINAIRE POUR CENTRALE ELECTRIQUE A REFRIGERATION SECHE = BINARY CYCLE FOR DRY COOLING POWER PLANTJAUMOTTE AL; GAIVAO A.1983; REVUE GENERALE DE THERMIQUE; ISSN 0035-3159; FRA; DA. 1983; VOL. 22; NO 255; PP. 263-280; ABS. ENG; BIBL. 12 REF.Article

Annihilation de positons dans les régions désordonnées de Ge et Si irradiés par neutronsPUSTOVOJT, A. K; KONOPLEVA, R. F; KUPCHISHIN, A. I et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 2, pp 257-263, issn 0015-3222Article

INFLUENCE DE LA PRESSION D'HYDROGENE SUR LE TYPE DE CONDUCTIVITE DE L'HYDRURE DE LITHIUM SOLIDEPTASHNIK VV; DUNAEVA T YU; BAJKOV YU M et al.1982; ELEKTROHIMIJA; ISSN 0424-8570; SUN; DA. 1982; VOL. 18; NO 10; PP. 1335-1339; BIBL. 16 REF.Article

MOSFET PAIRS SIMPLIFY AUDIO-AMPLIFIER DESIGN1980; ELECTRON. DESIGN; USA; DA. 1980; VOL. 28; NO 16; PP. 75-79Article

METALLIZATION SYSTEMS FOR OHMIC CONTACTS TO P- AND N-TYPE GAASGUPTA RP; FREYER J.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 5; PP. 459-467; BIBL. 25 REF.Article

AN EXTENDED OPERATION OF THREE-PHASE SCCD'S BY CONTROLLED FREE-CHARGE TRANSFERSHANKAR NARAYANAN L; BHATTACHARYYA AB.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1897-1900; BIBL. 11 REF.Article

ELECTRIFICATION OF TWO-COMPONENT DUST PRODUCED USING N- AND P-TYPE GERMANIUMSZARO L; MALCHER J.1979; J. ELECTROSTATICS; NLD; DA. 1979; VOL. 6; NO 1; PP. 83-93; BIBL. 15 REF.Article

A NEW SURFACE PREPARATION AND BEVELLING TECHNIQUE FOR SPREADING RESISTANCE MEASUREMENTS ON N- AND P-TYPE SILICON.UNTER TF; LAMB DR.1975; MICROELECTRONICS; G.B.; DA. 1975; VOL. 6; NO 4; PP. 17-20; BIBL. 5 REF.Article

QUELLE TECHNOLOGIE MOS POUR VOS CIRCUITS SUR MESURE.CARASSIC F.1980; ELECTRON. IND.; FRA; DA. 1980; NO 6; PP. 35-37Article

IONIZATION TRANSIENTS OF SHALLOW LEVELS IN SILICON SPACE CHARGE LAYER AT LOW TEMPERATUREROSENCHER E; MOSSER V; VINCENT G et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 7; PP. 629-632; BIBL. 10 REF.Article

THE IMPACT OF SCALING LAWS ON THE CHOICE OF N-CHANNEL OR P-CHANNEL FOR MOS VLSICHATTERJEE PK; HUNTER WR; HOLLOWAY TC et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 220-223; BIBL. 15 REF.Article

EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION IMPLANTATIONBRAUNSTEIN G; KALISH R.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2106-2108; BIBL. 15 REF.Article

TEMPERATURE COEFFICIENT OF RESISTANCE FOR P- AND N-TYPE SILICONNORTON P; BRANDT J.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 969-974; BIBL. 4 REF.Article

SUBTHRESHOLD DEFECT GENERATION AND ANNEALING IN SILICON BY INTENSE ELECTRON BEAM BOMBARDMENTHINCKLEY S; HORA H; KELLY JC et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. 419-427; ABS. GER; BIBL. 38 REF.Article

MULTIPLE-ENERGY PROTON BOMBARDMENT IN N⁺-GAAS.DONNELLY JP; LEONBERGER FJ.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 183-189; BIBL. 22 REF.Article

FOCAL MECHANISM OF A SHOCK AT THE NORTH-WESTERN BOUNDARY OF THE PACIFIC PLATE: EXTENSIONAL FEATURE OF THE OCEANIC LITHOSPHERE AND COMPRESSIONAL FEATURE OF THE CONTINENTAL LITHOSPHERESHIMAZAKI K.1972; PHYS. EARTH PLANET. INTER.,; NETHERL.; DA. 1972; VOL. 6; NO 5; PP. 397-404; BIBL. 31REF.Serial Issue

NONRADIAL M-MODE CHANGES IN THE 53 PERSEI VARIABLE 22 ORIONISSMITH MA.1980; ASTROPHYS. J., SUPPL. SER.; USA; DA. 1980; VOL. 42; NO 2; PP. 261-281; BIBL. 23 REF.Article

HIGH-PERFORMANCE NMOS OPERATIONAL AMPLIFIERSENDEROWICZ D; HODGES DA; GRAY PR et al.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 6; PP. 760-766; BIBL. 9 REF.Article

AMORDNUNG FUER SPEKTRALE RAUSCHUNTERSUCHUNGEN ZWISCHEN 30 MHZ UND 400 MHZ BEI IMPULSARTIG BELASTETEN HALBLEITERN = SYSTEME POUR L'ANALYSE SPECTRALE DU BRUIT ENTRE 30 MHZ ET 400 MHZ SUR DES SEMICONDUCTEURS EXCITES PAR IMPULSIONSSACHSE K.1979; ARCH. ELEKTROTECH.; DEU; DA. 1979; VOL. 61; NO 2; PP. 123-128; ABS. ENG; BIBL. 4 REF.Article

EFFET DE MAGNETODIODE DANS LE SILICIUM DE TYPE P IRRADIE PAR LES PROTONSKARAKUSHAN EH I; FATTAKHDINOV AU.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 10; PP. 2008-2011; BIBL. 3 REF.Article

OXYGEN SEMIPERMEABILITY AND ELECTRONIC CONDUCTIVITY IN CALCIASTABILIZED ZIRCONIACALES B; BAUMARD JF.1982; JOURNAL OF MATERIALS SCIENCE; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 11; PP. 3243-3248; BIBL. 16 REF.Article

SILUER SCHOTTKY DIODES ON KELVIN, AES AND LEED CHARACTERIZED (100) SURFACES OF GAAS CLEANED BY ION BOMBARDMENTPALAU JM; TESTEMALE E; ISMAIL A et al.1982; SOLID-STATE ELECTRON; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 4; PP. 285-294; BIBL. 35 REF.Article

COMPARISON OF CHARACTERISTICS OF N-CHANNEL AND P-CHANNEL MOSFETSTAKEDA E; NAKAGOME Y; KUME H et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 675-680; BIBL. 13 REF.Article