kw.\*:(%22NON VOLATILE MEMORY%22)
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NON-VOLATILE R.A.M.S IN CONSUMER CIRCUITSWALLACE C.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 3; PP. 100-103; (3 P.)Article
DES "EEPROM" QUI POURRAIENT ETRE LES PREMIERES RAM NON VOLATILESARMAILLE J.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 37-39Article
CELL LAYOUT BOOSTS SPEED OF LOW-POWER 64-K ROM.WILSON DR.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 96-99Article
V-MOS CONFIGURATION PACKS 64 KILOBITS INTO 175-MIL2 CHIP.HOLDT T; YU R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 99-104Article
EAROM: NON-VOLATILE DATA STORAGESIRAIH A.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 609; PP. 61-62Article
MEGABIT BUBBLE MEMORY FOR NON-VOLATILE STORAGESIEGEL P.1980; ELECTRON. ENJ.; ISSN 0013-4902; GBR; DA. 1980; VOL. 52; NO 634; PP. 51-59; (5 P.)Article
NON-VOLATILE MEMORY PROPERTIES OF METAL/SRTIO3/SIO2/SI STRUCTURESHUANG TY; GRANNEMANN WW.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 2; PP. 159-166; BIBL. 16 REF.Article
LA NOVRAM: A LA FOIS RAM ET ROM1978; INTER ELECTRON.; FRA; DA. 1978; NO 273; PP. 44-45Article
ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY.NEUGEBAUER CA; BURGESS JF; STEIN L et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 613-618; BIBL. 10 REF.Article
ELECTRICAL CHARACTERISTICS, RELIABILITY AND APPLICATION OF THE 16 KBIT EEPROMWAKIMOTO H; NABETANI S; SATO N et al.1983; HITACHI REVIEW; ISSN 0018-277X; JPN; DA. 1983; VOL. 32; NO 1; PP. 45-48; BIBL. 4 REF.Article
LES MEMOIRES NON VOLATILES ELECTRIQUEMENT REPROGRAMMABLES. BILAN ET PERSPECTIVES. I: LES PRINCIPES PHYSIQUES ET LEUR MISE EN OEUVREROUX P; CAZENAVE P; DOM JP et al.1983; ONDE ELECTRIQUE; ISSN 0030-2430; FRA; DA. 1983; VOL. 63; NO 3; PP. 29-33; ABS. ENG; BIBL. 21 REF.Article
PLATINUM-INDUCED HYSTERISIS AND NONVOLATILE MEMORY PROPERTIES IN MOS SYSTEMS (PLATMOS)NASSIBIAN AG; FARAONE L.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1757-1761; BIBL. 12 REF.Article
FUNCTIONAL MODELLING OF NON-VOLATILE MOS MEMORY DEVICES.CARD HC; ELMASRY MI.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 10; PP. 863-870; BIBL. 32 REF.Article
LA 2816 D'INTEL EST LA PREMIERE MEMOIRE EEPROM 16K NON VOLATILE EFFACABLE MOT PAR MOT1980; MES., REGUL., AUTOM.; ISSN 0026-0193; FRA; DA. 1980; VOL. 45; NO 12; PP. 91Article
MEMOIRES RAM NON VOLATILES: ELLES FONCTIONNENT SOUS 5VLOUIS P.1980; ELECTRON. IND.; FRA; DA. 1980; NO 2; PP. 45-46Article
RESERVE-SPERNNUNGSVERSORGEING MIT BATTERIE FUER CMOS-RAMS = ALIMENTATION AUXILIAIRE AVEC BATTERIE POUR MEMOIRE A ACCES DIRECT A TRANSISTOR MOS COMPLEMENTAIREYOUNG DC.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 4; PP. 73-78; BIBL. 17 REF.Article
DUAL DIELECTRIC NONVOLATILE MEMORY CELLS WITH THERMALLY GROWN SILICON NITRIDE FILMSHIJIYA S; ITO T; SHINODA M et al.1980; FUJITSU SCI. TECH. J.; ISSN 0016-2523; JPN; DA. 1980; VOL. 16; NO 3; PP. 115-121; BIBL. 5 REF.Article
DER EINSATZ VON EAROMSS ALS NICHTFLUECHTIGE SCHREIB-LESE-SPEICHER = L'EMPLOI DE EAROM COMME MEMOIRE D'ENREGISTREMENT-LECTURE NON VOLATILEROESLER G.1978; ELEKTRONIK; DEU; DA. 1978; VOL. 27; NO 12; PP. 75-81; BIBL. 4 REF.Article
MEMOIRE OPTIQUE NON VOLATILE UTILISANT DES STRUCTURES MAOSTARUI Y; KOMIYA Y; SAKAMOTO T et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 272-279; ABS. ANGL.; BIBL. 16 REF.Article
MEMOIRE SEMI-CONDUCTEUR NON VOLATILE EFFACABLE ELECTRIQUEMENTHAYASHI Y; NAGAI K; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 256-262; ABS. ANGL.; BIBL. 6 REF.Article
ELECTRICALLY ERASABLE MEMORY BEHAVES LIKE A FAST, NONVOLATILE RAMWALLACE C.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 10; PP. 128-131Article
ELECTROCHROMIC MEMORY DEGRADATION IN WOX-LICLO4/PC CELLSMORITA H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PART. 1; PP. 655-658; BIBL. 7 REF.Article
CHALCOGENIDE MEMORY MATERIALSHOLMBERG SH; SHANKS RR; BLUHM VA et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 333-344; BIBL. 17 REF.Article
NONVOLATILE SEMICONDUCTOR STORAGE FOR VERY SMALL SYSTEMSCRAYCRAFT DG.1979; MIDCON 79 CONFERENCE/1979/CHICAGO IL; USA; LOS ANGELES: IMPR. AMERICAN OFFSET PRINTERS; DA. 1979; NO 26/1; 4 P.Conference Paper
INTEGRATED CIRCUITS - MOS VLSI MEMORY1978; INTERNATIONAL ELECTRON DEVICES MEETING/1978-12-04/WASHINGTON DC; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1978; 336-363; BIBL. DISSEM.Conference Paper
