CURRENT-VOLTAGE CHARACTERISTICS OF GAAS P-I-N AND N-I-N DIODES.HRIVNAK L; MORVIC M; BETKO J et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 5; PP. 417-419; BIBL. 7 REF.Article

MONTE CARLO SIMULATION OF SUBMICRON GAAS N⁺-I(N)-N⁺ DIODETOMIZAWA K; AWANO Y; HASHIZUME N et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 4; PP. 131-136; BIBL. 9 REF.Article

A SIMPLIFIED THEORY OF THE P-I-N DIODE.BERZ F.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 709-714; BIBL. 11 REF.Article

IONISATION PAR CHOCS DANS UNE STRUCTURE N-I-P A BANDE VARIABLEARUTYUNYAN VM; PETROSYAN SG.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 10; PP. 2001-2006; BIBL. 13 REF.Article

SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES.ROSEN A; SWARTZ GA; DUIGON FC et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 680-682; BIBL. 5 REF.Article

RAMP RECOVERY IN P-I-N DIODESBERZ F.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 783-792; BIBL. 9 REF.Article

NUMERICAL SOLUTIONS FOR SURFACE ELECTRIC FIELD DISTRIBUTIONS IN AVALANCHING P-I-N POWER DIODESPATHAK VK; GOWAR J.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 17-23; BIBL. 7 REF.Article

COMPUTER-AIDED DESIGN CONSIDERATION ON LOW-LOSS P-I-N DIODESNAKAGAWA A; KURATA M.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 231-237; BIBL. 9 REF.Article

INFLUENCE DE L'IRRADIATION NEUTRONIQUE ET DU RECUIT SUR LES CARACTERISTIQUES DES STRUCTURES P-I-NKORSHUNAW FP; KAZHEHKYI TV.1977; VESCI AKAD. NAVUK B.S.S.R., FIZ. MAT. NAVUK; S.S.S.R.; DA. 1977; NO 4; PP. 95-99; BIBL. 6 REF.Article

ELECTROLUMINESCENCE IN AMORPHOUS SILICON P-I-N JUNCTIONSNASHASHIBI TS; AUSTIN IG; SEARLE TM et al.1982; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 6; PP. 553-571; BIBL. 17 REF.Article

STEP RECOVERY OF P-I-N DIODESBERZ F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 927-932; BIBL. 14 REF.Article

POUR VOS MONTAGES HYPERFREQUENCES: DES DIODES PIN ET SCHOTTKY EN "BEAM LEAD"WARGIN JJ.1981; ELECTRON. IND.; FRA; DA. 1981; NO 8; PP. 35-38Article

P-I-N DIODES FOR LOW-FREQUENCY HIGH-POWER SWITCHING APPLICATIONSCAULTON M; ROSEN A; STABILE PJ et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 6; PP. 875-882; BIBL. 9 REF.Article

PIN-BIPOLAR OPTICAL RECEIVER USING A HIGH-FREQUENCY HIGH-BETA TRANSISTORMITCHELL AF; O'MAHONY MJ; BOXALL BA et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 445-447; BIBL. 6 REF.Article

DESIGN AND DEVELOPMENT OF L-BAND PIN DIODE SPDT SWITCHESSARKAR BK.1980; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1980; VOL. 26; NO 10; PP. 550-552; BIBL. 4 REF.Article

THERMALLY INDUCED SWITCHING AND FAILURE IN P-I-N RF CONTROL DIODESCHAFFIN RJ.1982; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 11; PP. 1944-1947; BIBL. 2 REF.Article

INTERACTION OF HIGH POWER P-I-N DIODES AND DRIVING CIRCUIT DURING FORWARD-BIAS SWITCHING.GEORGOPOULOS CJ.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 295-302; BIBL. 11 REF.Article

SURFACE-PASSIVATED LOW DARK CURRENT INGAAS PIN PHOTODIODESNICKEL H; KUPHAL E.1983; JOURNAL OF OPTICAL COMMUNICATIONS; ISSN 0173-4911; DEU; DA. 1983; VOL. 4; NO 2; PP. 63-67; BIBL. 19 REF.Article

TEMPERATURE RISE IN MICROWAVE P-I-N DIODES: A COMPUTER AIDED ANALYSISRAMAMURTHY V; CHATURVEDI PK; KAKATI D et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 445-453; BIBL. 9 REF.Article

P-I-N DIODE RECOVERY STORAGE TIMESLATTER JAG; WHELAN JP.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1235-1242; BIBL. 13 REF.Article

PHOTOCONDUCTIVITE DES STRUCTURES P.I.N LORS DE L'ABSORPTION DE LA LUMIERE PAR LES PORTEURS INJECTESBLOKHIN IK; OSIPOV VV; STAFEEV VI et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 8; PP. 1702-1707; BIBL. 14 REF.Article

OPTIMUM CHARGE-CARRIER LIFETIME IN PIN HIGH-VOLTAGE DIODESZOLOMY J.1978; PERIOD. POLYTECH., ELECTR. ENGNG; HUN; DA. 1978; VOL. 22; NO 1; PP. 27-30; BIBL. 5 REF.Article

CONTRIBUTION A L'ETUDE DU COMPORTEMENT PHYSIQUE DES DISPOSITIFS SEMI-CONDUCTEURS PIN ET PNPN.MUNOZ YAGUEE A.1977; ; S.L.; DA. 1977; PP. 1-157; BIBL. 6 P. 1/2; (THESE DOCT. SCI.; PAUL SABATIER TOULOUSE)Thesis

DETERMINATION OF THE CARRIER LIFETIME FROM THE OPEN-CIRCUIT VOLTAGE DECAY OF P-I-N RECTIFIERS AT HIGH-INJECTION LEVELSMOHAMED JAMELEDDINE BEN HAMOUDA; GERLACH W.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 6; PP. 953-955; BIBL. 6 REF.Article

THE OPTICAL (FREE-CARRIER) ABSORPTION OF A HOLE-ELECTRON PLASMA IN SILICONHORWITZ CM; SWANSON RM.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1191-1194; BIBL. 13 REF.Article