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AVALANCHE BREAKDOWN VOLTAGE OF GAAS HYPERABRUPT JUNCTIONSSHIMIZU A; KOSHIMIZU T.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1155-1160; BIBL. 28 REF.Article

PARTICULARITES CINETIQUES DU DECAPAGE SELECTIF DES STRUCTURES N+-N DU SILICIUMIZIDINOV SO; BLOKHINA AP.1979; ZH. PRIKL. KHIM.; SUN; DA. 1979; VOL. 52; NO 6; PP. 1223-1228; BIBL. 15 REF.Article

ETUDE DE LA VARIATION EN FONCTION DE LA TEMPERATURE ET DE LA CONCENTRATION DE LA RESISTANCE NEGATIVE D'UNE JONCTION N+-N PONCTUELLE EN SILICIUMBLONSKIS V; VASILETS O; REPSHAS K et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 1947-1950; BIBL. 10 REF.Article

THERMAL EMISSION RATES AND CAPTURE CROSS-SECTION OF MAJORITY CARRIERS AT TITANIUM LEVELS IN SILICONMORANTE JR; CARCELLER JE; CARTUJO P et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 1-6; BIBL. 23 REF.Article

BOUNDARY CONDITIONS AT P-N JUNCTIONSHEASELL EL.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 853-856; BIBL. 16 REF.Article

THE STEP N-N+ HOMOJUNCTION.KUZNICKI ZT.1978; BULL. ACAD. POLON. SCI., SCI. TECH.; POL; DA. 1978; VOL. 26; NO 3; PP. 259-268; ABS. RUS; BIBL. 13 REF.Article

INERTIE D'UN "FILAMENT" DE COURANT ET INFLUENCE DE REACTIONS EXTERIEURES SUR SA STABILITE LORS DE LA DISRUPTION SECONDAIRE DE JONCTIONS P-NVALATSKA K; VISHNYAUSKAS YU; MACHYULAJTIS CH et al.1979; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1979; NO 4; PP. 533-541; ABS. LIT/ENG; BIBL. 6 REF.Article

ETUDE DU CLAQUAGE ELECTRIQUE DES JONCTIONS P-N, DIFFUSEES, AU GAASGAGKAEVA VV; MASHNIN SV.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 6; PP. 1241-1246; BIBL. 8 REF.Article

CAPACITE D'UNE STRUCTURE P-N ABRUPTEKONSTANTINOV OV; MEZRIN OA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 1; PP. 68-76; BIBL. 5 REF.Article

CARACTERISTIQUES DE JONCTIONS PN DANS INP TYPE N)AGAEV YA; GAZAKOV O; ATABAEV KH et al.1977; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; S.S.S.R.; DA. 1977; NO 1; PP. 20-24; ABS. TURKM. ANGL.; BIBL. 5 REF.Article

SIMPLE RELATIONSHIP BETWEEN THE BREAKDOWN VOLTAGE, CONCENTRATION, AND JUNCTION DEPTH FOR DIFFUSED PN JUNCTIONSRANG T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K117-K119; BIBL. 13 REF.Article

THEORY OF OPEN CIRCUIT PHOTO-VOLTAGE IN DEGENERATE ABRUPT P-N JUNCTIONSVIJAYKUMAR D; SHARMA SK.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1161-1164; BIBL. 11 REF.Article

THEORETICAL STUDY OF THE DEPLETION-LAYER CAPACITANCE IN ABRUPT P-N SEMICONDUCTOR JUNCTIONS.WEINHAUSEN G.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 2; PP. 517-525; ABS. GER; BIBL. 14 REF.Article

PHOSPHORUS DIFFUSION IN SILICON FROM A SPIN-ON P-DOPED SILICON OXIDE FILMMAR KM.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1252-1257; BIBL. 30 REF.Article

BESTIMMUNG VON PN-UEBERGANSTIEFEN MIT HILFE EINER ELEKTRONENSONDE. = DETERMINATION DES PROFONDEURS DE JONCTIONS PN AU MOYEN D'UNE SONDE ELECTRONIQUEBACH K; KAISER N; MUHLE R et al.1977; EXPER. TECH. PHYS.; DTSCH.; DA. 1977; VOL. 25; NO 3; PP. 205-211; ABS. ANGL.; BIBL. 21 REF.Article

THERMALLY ASSISTED FIELD EMISSION NEAR PRECIPITATES IN P-N JUNCTIONS.BUSTA HH; WAGGENER HA.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4385-4388; BIBL. 7 REF.Article

THE PN-JUNCTION TRANSITION REGIONGUCKEL H; THOMAS DC; DEMIRKOL A et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 9; PP. 829-830; BIBL. 5 REF.Article

INSTABILITE DE LA TENSION AUX BORNES D'UNE JONCTION P-N A PORTEURS CHAUDSVEJNGER AI.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1321-1326; BIBL. 8 REF.Article

A NOTE ON THE ASSUMPTION OF QUASIEQUILIBRIUM IN SEMI-CONDUCTOR JUNCTION DEVICES.VON ROOS O.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5389-5391; BIBL. 11 REF.Article

INVESTIGATION OF THE AGING PROCESSES OF THE P-N JUNCTION BASED ON A SINGLE DISLOCATION.MIL'SHTEIN SK.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 10; PP. 1184-1185; BIBL. 9 REF.Article

PERFECTION STRUCTURALE DE MONOCRISTAUX D'ANTIMONIURE D'INDIUM AVEC UNE JONCTION P-N DE CROISSANCE OBTENUS DANS LES CONDITIONS DE VOL ORBITALSHUL'PINA IL; SOROKIN LM; RAUKHMAN MR et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3043-3049; BIBL. 17 REF.Article

METHODE DE DECORATION DES JONCTIONS P-N DANS LE SILICIUMKURMASHEV VI; PETROVICH VA.1979; ZAVODSK. LAB.; SUN; DA. 1979; VOL. 45; NO 2; PP. 146-147; BIBL. 2 REF.Article

DISPOSITIF POUR LA VISUALISATION DES IMAGES TOPOGRAPHIQUES RX DE STRUCTURE PN AU COURS DU PROCEDE DE LEUR PREPARATIONSHABOYAN SA.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 4; PP. 278-283; ABS. ARM. ANGL.; BIBL. 8 REF.Article

SPECTRAL RESPONSE OF A LATERALLY ILLUMINATED P-N JUNCTION.SETH BM; BHATNAGAR PK.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 41; NO 6; PP. 621-623; BIBL. 6 REF.Article

OPTOELECTRONIC SATURATION BEHAVIOR OF A P-N JUNCTIONPAOLI TL.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 3; PP. 340-346; BIBL. 9 REF.Article

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