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Results 1 to 25 of 1396491

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High efficiency orange-red applications and materials science phosphorescent organic light emitting diodes based on a Pt(II)-pyridyltriazolate complex from a structure optimized for charge balance and reduced efficiency roll-offMINGHANG LI; LIN, Ming-Te; CHEN, Wei-Hsuan et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 221-225, issn 1862-6300, 5 p.Article

High optical quality multicarat single crystal diamond produced by chemical vapor depositionMENG, Yu-Fei; YAN, Chih-Shiue; KRASNICKI, Szczesny et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 101-104, issn 1862-6300, 4 p.Article

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related AlloysZHU, D; MCALEESE, C; HUMPHREYS, C. J et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 13-16, issn 1862-6300, 4 p.Article

Mechanism of surface proton transfer doping in pentacene based organic thin-film transistorsAUSSERLECHNER, Simon J; GRUBER, Manfred; STADLOBER, Barbara et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 181-192, issn 1862-6300, 12 p.Article

Taming transport in InN : Indium Nitride and Related AlloysAGER, Joel W; MILLER, Nate R.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 83-86, issn 1862-6300, 4 p.Article

The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related AlloysGAMARRA, Piero; LACAM, Cedric; MAGIS, Michelle et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 21-24, issn 1862-6300, 4 p.Article

1/f noise in conducting channels of topological insulator materialsZAHID HOSSAIN, M; RUMYANTSEV, Sergey L; TEWELDEBRHAN, Desalegne et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 144-146, issn 1862-6300, 3 p.Article

A comparative study of the microstructure―dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approachPOPOVICI, Mihaela; TOMIDA, Kazuyuki; PAWLAK, Malgorzata A et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1920-1924, issn 1862-6300, 5 p.Article

Applications of an energy-dispersive pnCCD for X-ray reflectivity: Investigation of interdiffusion in Fe―Pt multilayers : High-resolution X-ray Diffraction and ImagingABBOUD, Ali; SEND, Sebastian; HARTMANN, Robert et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 11, pp 2601-2607, issn 1862-6300, 7 p.Article

Capacitance-voltage and applications and materials science impedance-spectroscopy characteristics of nanoplate EISOI capacitors : Engineering of Functional InterfacesABOUZAR, Maryam H; MORITZ, Werner; SCHÖNING, Michael J et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 6, pp 1327-1332, issn 1862-6300, 6 p.Article

Cathodo!uminescence study of off-stoichiometry and residual stresses in advanced dielectrics and related devices : Advances in Electronic Materials and Devices in the Far EastLETO, Andrea; PEZZOTTI, Giuseppe.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 5, pp 1119-1126, issn 1862-6300, 8 p.Article

Characterization of Au-metal nanoparticle-hybridized poly (3,4-ethylenedioxythiophene) films for electrochromic devicesJONG SEOK LEE; CHOI, Yong-June; WANG, Seok-Joo et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 81-85, issn 1862-6300, 5 p.Article

Characterization of ferromagnetism around interfaces by rear-incident magneto-optic Kerr effectTSUBOUCHI, Kenta; OHKUBO, Isao; OSHIMA, Masaharu et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 4, pp 900-903, issn 1862-6300, 4 p.Article

Comment on Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN [Phys. Status Solidi A 205, 1872 (2008)]GEHLHOFF, W; SALAMEH, B; HOFFMANN, A et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1953-1956, issn 1862-6300, 4 p.Article

DNA-sensor based on AIGaN/GaN high electron mobility transistorSCHWARZ, Stefan U; LINKOHR, Stefanie; LORENZ, Pierre et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1626-1629, issn 1862-6300, 4 p.Article

Determination of the density of ultrathin La films in La/B4C layered structures using X-ray standing waves : High-resolution X-ray Diffraction and ImagingMAKHOTKIN, I. A; LOUIS, E; VAN DE KRUIJS, R. W. E et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 11, pp 2597-2600, issn 1862-6300, 4 p.Article

Development and characterization of EIS structures based on SiO2 micropillars and pores before and after their functionalization with phosphonate films : Engineering of Functional InterfacesHOFMANN, Martina; CATTANI-SCHOLZ, Anna; DALMAU MALLORQUI, Anna et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 6, pp 1333-1339, issn 1862-6300, 7 p.Article

Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structuresEYBEN, Pierre; SEIDEL, Felix; HANTSCHEL, Thomas et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 3, pp 596-599, issn 1862-6300, 4 p.Article

Domain structure of magnetic nanotube with transverse anisotropy : Magnetic WiresUSOV, N. A; ZHUKOV, A; GONZALEZ, J et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 3, pp 535-539, issn 1862-6300, 5 p.Article

Effects of annealing on the structural and photoluminescence properties of Zn0.98Cr0.02O thin films prepared by magnetron sputteringFU, C. F; HAN, L. F; LIU, C et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 11, pp 2661-2665, issn 1862-6300, 5 p.Article

Effects of high-pressure H2O-annealing on amorphous IGZO thin-film transistorsHYUN SOO SHIN; YOU SEUNG RIM; MO, Yeon-Gon et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2231-2234, issn 1862-6300, 4 p.Article

Effects of polarization charge on the photovoltaic properties of InGaN solar cellsLI, Z. Q; LESTRADET, M; XIAO, Y. G et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 4, pp 928-931, issn 1862-6300, 4 p.Article

Electrical and optical study of phase transitions in thermally evaporated GeTe filmsKUMAR, P; THANGARAJ, R; SATHIARAJ, T. S et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 4, pp 838-842, issn 1862-6300, 5 p.Article

Electrical properties of (Na,Ce) doped BisTJBFeOis ceramics : Advances in Electronic Materials and Devices in the Far EastZHEN HUANG; WANG, Gen-Shui; LI, Yu-Chen et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 5, pp 1047-1051, issn 1862-6300, 5 p.Article

Electro-tuning of surface state in two-dimensional photonic crystalsALI SOLTANI VALA; REZAEI, Emad; HOSEINI, Naser et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1854-1857, issn 1862-6300, 4 p.Article

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