Ac conductivity and dielectric properties of TIIn_0.975Y_0.025S₂ single crystalEL-NAHASS, M. M; EL-BARRY, A. M. A; EL RAHMAN, S. Abd et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 2, pp 317-326, issn 0031-8965, 10 p.Article

Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anodeXU, A. G; RAN, G. Z; WU, Z. L et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 2, pp 428-434, issn 0031-8965, 7 p.Article

Metastable and quasiperiodic phases in rapidly quenched Fe-B-Si-Nb(Cu) alloysLYASOTSKII, I. V; DYAKONOVA, N. B; VLASOVA, E. N et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 2, pp 259-270, issn 0031-8965, 12 p.Article

Plasmonic effects in InN-based structures with nano-clusters of metallic indiumSHUBINA, T. V; IVANOV, S. V; JMERIK, V. N et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 13-24, issn 0031-8965, 12 p.Conference Paper

Electron band structure and optical properties of InN and related alloysALEXANDROV, D; BUTCHER, S; TANSLEY, T et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 25-34, issn 0031-8965, 10 p.Conference Paper

Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InNLITIMEIN, F; BOUHAFS, B; RUTERANA, P et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 35-41, issn 0031-8965, 7 p.Conference Paper

Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloysGOLDHAHN, R; SCHLEY, P; SCHAFF, W. J et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 42-49, issn 0031-8965, 8 p.Conference Paper

Growth and properties of InN, InGaN, and InN/InGaN quantum wellsNAOI, H; KUROUCHI, M; MUTO, D et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 93-101, issn 0031-8965, 9 p.Conference Paper

III-Nitrides semiconductor compounds for microwave devicesDI FORTE-POISSON, M. A; MAGIS, M; SARAZIN, N et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 185-193, issn 0031-8965, 9 p.Conference Paper

Strain state analysis of InGaN/GaN : sources of error and optimized imaging conditionsROSENAUER, A; GERTHSEN, D; POTIN, V et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 176-184, issn 0031-8965, 9 p.Conference Paper

Surface band bending at nominally undoped and Mg-doped InN by Auger Electron SpectroscopyCIMALLA, V; NIEBELSCHÜTZ, M; ECKE, G et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 59-65, issn 0031-8965, 7 p.Conference Paper

Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)WEI CHEN; KIAN PING LOH; MING LIN et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 37-45, issn 0031-8965, 9 p.Article

CuInS₂ films using repeated chemical spray pyrolysisJOHN, Teny Theresa; WILSON, K. C; RATHEESH KUMAR, P. M et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 79-84, issn 0031-8965, 6 p.Article

Direct observation of lamellar 90° and 180° domains in single grains of PZT thin film at nanoscale resolutionYU, H. F; ZENG, H. R; CHU, R. Q et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 158-162, issn 0031-8965, 5 p.Article

Effects of substrate bias and argon flux on the structure of titanium nitride films deposited by filtered cathodic arc plasmaZHANG, Y. J; YAK, P. X; WU, Z. G et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 95-101, issn 0031-8965, 7 p.Article

Fabrication and microstructures of Si composite nanocone arraysMENG, X. M; SHANG, N. G; LEE, C. S et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 13, pp 2479-2483, issn 0031-8965, 5 p.Article

High purity alpha silicon nitride nanowires : synthesis and dielectric propertiesXIE, T; WU, Y. C; CAI, W. P et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 10, pp 1919-1924, issn 0031-8965, 6 p.Article

Highly efficient all-nitride phosphor-converted white light emitting diodeMUELLER-MACH, Regina; MUELLER, Gerd; KRAMES, Michael R et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 9, pp 1727-1732, issn 0031-8965, 6 p.Article

Impedance spectroscopy on organic bulk-heterojunction solar cellsGLATTHAAR, M; MINGIRULLI, N; ZIMMERMANN, B et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 11, pp R125-R127, issn 0031-8965Article

Increased thermal conductivity of free-standing low-dislocation-density GaN filmsWEILI LIU; BALANDIN, Alexander A; LEE, Changho et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 12, pp R135-R137, issn 0031-8965Article

Insights into OLED functioning through coordinated experimental measurements and numerical model simulationsBERNER, D; HOUILI, H; LEO, W et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 9-36, issn 0031-8965, 28 p.Article

Interfacial modification of amorphous substrates for microcrystalline silicon growth with in situ hydrogen plasma pretreatmentPARK, Young-Bae; RHEE, Shi-Woo; XIAODONG LI et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 13, pp 2448-2453, issn 0031-8965, 6 p.Article

Large quasi-linear electro-optical response of BaZr_0.75Hf_0.25O₃ thin films by pulsed laser depositionTIAN, H. Y; WANG, D. Y; ZHOU, X. Y et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp R63-R65, issn 0031-8965Article

Microscope Raman scattering and X-ray diffraction study of near-stoichiometric Ti:LiNbO₃ waveguidesZHANG, De-Long; SIU, G. G; PUN, E. Y. B et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 13, pp 2521-2530, issn 0031-8965, 10 p.Article

Microstructural modification of nc-Si/SiO_x films during plasma-enhanced chemical vapor depositionZHANG, X. W.Physica status solidi. A. Applied research. 2005, Vol 202, Num 9, pp 1773-1777, issn 0031-8965, 5 p.Article