L'EEPROM QUI SE VEUT RAM NON VOLATILEROUBLOT R.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 44-45Article

E-PROM RELIABILITY. II: TESTS AND SCREENS WEED OUT FAILURES, PROJECT RATES OF RELIABILITYROSENBERG S.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 18; PP. 136-141Article

MEMOIRES REPROGRAMMABLES: UNE NOUVELLE TECHNOLOGIE POUR LES EAROM.PEYRUCAT JF.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 234; PP. 37-39Article

MEMOIRES MORTES OU VIVES: COMMENT LES TESTER.BOUCHET C.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 21-26Article

OPTIMISING FIXED CONTENT MEMORIES.HAYNES G.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 19; PP. 26-29 (2P.)Article

PROGRAMMABLE READ-ONLY MEMORIES. FAIRCHILD SEMICONDUCTOR.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 14; PP. 24-26Article

A 4-MBIT FULL-WAFER ROMKITANO Y; KOHDA S; KIKUCHI H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1621-1628; BIBL. 14 REF.Article

POWER STROBING OF BIPOLAR READ-ONLY MEMORIES.JACKSON PJ.1978; MULLARD TECH. COMMUNIC.; GBR; DA. 1978; VOL. 14; NO 138; PP. 299-305Article

EAROM: NON-VOLATILE DATA STORAGESIRAIH A.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 609; PP. 61-62Article

A SIMPLE METHOD FOR MODELING VLSI YIELDSSTAPPER CH; ROSNER RJ.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 6; PP. 487-489; BIBL. 14 REF.Article

A BIPOLAR 16K ROM UTILIZING SCHOTTKY DIODE CELLS.GUNN JF; LYNES DJ; PRITCHETT RL et al.1977; COMPUTER; U.S.A.; DA. 1977; VOL. 10; NO 7; PP. 14-17Article

PATCHING A PROGRAM INTO A ROM MAY SEEM IMPOSSIBLE. INFACT, IT IS QUITE POSSIBLE AND CAN BE ACCOMPLISHED WITH A MINIMUM OF EXTRA CIRCUITRY.TRAVIS T.1976; ELECTRON. DESIGN; U.S.A.; DA. 1976; VOL. 24; NO 18; PP. 98-101; BIBL. 2 REF.Article

A MULTITRACK FERROELECTRIC ARRAY WITH INHERENT TRACK ACCESSGEARY JM.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 1046-1047; BIBL. 7 REF.Article

ETUDE DE POINT MEMOIRE A JONCTION POUR PROM.MOUSSIE M.1977; DGRST-7570660; FR.; DA. 1977; PP. 1-37; BIBL. 2 P.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MINIATURISES)Report

EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article

SOME PEDAGOGICAL CONSIDERATIONS OF DIGITAL FILTER HARDWARE IMPLEMENTATIONSCHMALZEL JL; HEDN DN; AHMED N et al.1980; I.E.E.E. CIRCUITS SYST. MAG.; USA; DA. 1980; VOL. 2; NO 1; PP. 4-13; BIBL. 11 REF.Article

BUILD A PROM PROGRAMMER.KERBER RJ.1976; ELECTRON. DESIGN; U.S.A.; DA. 1976; VOL. 24; NO 22; PP. 172-176; BIBL. 3 REF.Article

PROM-PROGRAMMIER-EINRICHTUNG BENOETIGT NUR 36 BYTE AN SOFTWARE = L'APPAREILLAGE DE PROGRAMMATION PROM NE DEMANDE QUE 36 BITS AU LOGICIELPELKA H.1978; ELEKTRONIK; DEU; DA. 1978; VOL. 27; NO 9; PP. 97-101; BIBL. 4 REF.Article

STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIESFALCONY C; DIMARIA DJ; DONG DW et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 43-47; BIBL. 13 REF.Article

LA 2816 D'INTEL EST LA PREMIERE MEMOIRE EEPROM 16K NON VOLATILE EFFACABLE MOT PAR MOT1980; MES., REGUL., AUTOM.; ISSN 0026-0193; FRA; DA. 1980; VOL. 45; NO 12; PP. 91Article

SOFTWARE-BASED CONTROLLER SIMPLIFIES PROM PROGRAMMERHOBSON RF.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 15; PP. 147-149; (2 P.)Article

TEST PATTERNS FOR EPROM'SKONDO R.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 4; PP. 730-734; BIBL. 7 REF.Article

LANG. ENGLANDERS G.1978; DIGIT. DESIGN; USA; DA. 1978; VOL. 8; NO 10; PP. 42-46Article

EAROMS IN DER PRAXIS = LA PRATIQUE DES MEMOIRES MORTES INTEGREES EFFACABLES ELECTRIQUEMENTMAIER R.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 7; PP. 48-50; BIBL. 2 REF.Article

E-PROM DOUBLES BIT DENSITY WITHOUT ADDING A PINGREENE B; LOUIE F.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 17; PP. 126-129Article