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Results 1 to 25 of 95839

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THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODESCHING YUAN WU.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2909-2912; BIBL. 5 REF.Article

QUELQUES QUESTIONS DE LA THEORIE DES DIODES A BARRIERE DE SCHOTTKYSHEKA DI.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 15-21; BIBL. 15 REF.Article

THE ACCURACY OF SCHOTTKY-BARRIER-HEIGHT MEASUREMENTS ON CLEAN-CLEAVED SILICON.VAN OTTERLOO JD; GERRITSEN LJ.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 723-729; BIBL. 21 REF.Article

ROLE OF OXYGEN IN THE MECHANISM OF FORMATION OF SCHOTTKY DIODESPONPON JP; SIFFERT P.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 6004-6011; BIBL. 15 REF.Article

APPLICATION DU PROCEDE SUBILO A LA REALISATION DE DISPOSITIFS SCHOTTKY.DE BREBISSON M; MOUSSIE M.1977; DGRST-7670650; FR.; DA. 1977; PP. 1-38; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

A NEW APPROACH TO THE DETERMINATION OF MS-BARRIER HEIGHTS FROM PHOTOELECTRIC DATA AND/OR AN ALTERNATIVE WAY TO DETERMINE THE VALVE OF THE RICHARDSON CONSTANTDE SOUSA PIRES J; DONOVAL D; TOVE PA et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 989-993; BIBL. 11 REF.Article

INTERFACIAL LAYER THEORY OF THE SCHOTTKY BARRIER DIODESCHING YUAN WU.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3786-3789; BIBL. 13 REF.Article

BARRIER HEIGHT REDUCTION OF THE SCHOTTKY BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE LAYERCHING YUAN WU.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 5; NO 9; PP. 4919-4922; BIBL. 4 REF.Article

THE MODELLING OF EDGE CURRENT IN SCHOTTKY BARRIER DEVICES.AL BAIDHAWI K; HOWES MJ; MORGAN DV et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 8; PP. 1203-1210; BIBL. 8 REF.Article

OPTIMUM BARRIER HEIGHT FOR SCHOTTKY-BARRIER DETECTORSSHOUSHA AHM.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 4; PP. 669-675; BIBL. 7 REF.Article

METAL/N-GAP SCHOTTKY BARRIER HEIGHTSLEI TF; LEE CL; CHANG CY et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 12; PP. 1035-1037; BIBL. 8 REF.Article

DETERMINATION OF THE BARRIER HEIGHT IN METAL-CDF2 SCHOTTKY DIODES.GARBARCZYK J; KRUKOWSKA FULDE B; LANGER T et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 2; PP. L17-L21; BIBL. 17 REF.Article

A MODIFIED FORWARD I-V PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCENORDE H.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5052-5053; BIBL. 1 REF.Article

PHENOMENE DE TRANSPORT DANS LES DIODES DE SCHOTTKY M-N-INPKOROTCHENKOV GS; MOLODYAN IP.1978; MIKROELEKTRONIKA; S.S.S.R.; DA. 1978; VOL. 7; NO 2; PP. 168-173; BIBL. 15 REF.Article

THE METAL-OVERLAP LATERALLY-DIFFUSED (MOLD) SCHOTTKY DIODE.RUSU A; BULUCEA C; POSTOLACHE C et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 499-506; H.T. 1; BIBL. 29 REF.Article

ENHANCED BARRIER HEIGHT OF AU-IN1-XGAXASYP1-Y SCHOTTKY DIODESBHATTACHARYA PK; YEAMAN MD.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 297-300; BIBL. 10 REF.Article

ENHANCEMENT OF EFFECTIVE BARRIER HEIGHT IN TI-SILICON SCHOTTKY DIODE USING LOW-ENERGY ION IMPLANTATIONLI SS; KIM JS; WANG KL et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1310-1312; BIBL. 7 REF.Article

BARRIER HEIGHT CONTROL OF PD2 SI/SI SCHOTTKY DIODES USING DIFFUSION FROM DOPED PDSTUDER B.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1181-1184; BIBL. 11 REF.Article

A NOTE ON THE EVALUATION OF SCHOTTKY DIODE PARAMETERS IN THE PRESENCE OF AN INTERFACIAL LAYER.ASHOK S; BORREGO JM; GUTMANN RJ et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 332-333; BIBL. 10 REF.Article

BARRIER HEIGHT STUDY ON AU-INP SCHOTTKY DIODES.HESS JM; NGUYEN PH; LEPLEY B et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 46; NO 1; PP. K55-K59; BIBL. 15 REF.Article

CURRENT-TUNED GAAS SCHOTTKY-BARRIER IMPATT DIODES FOR 60-96 GHZ OPERATIONSCHAWARZ RI; BONEK E.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 25; PP. 812-814; BIBL. 10 REF.Article

SI-SCHOTTKY-DIODE KD 514A AUS DER SOWJETUNION.BIELEFELDT R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 15; PP. 493Article

A NEW UNIFORM-FIELD SCHOTTKY-BARRIER STRUCTURE.RUSU A; BULUCEA C; POSTOLACHE C et al.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 5; PP. 524-528; ABS. FR.; BIBL. 5 REF.Article

BASES PHYSIQUES DE LA FIABILITE DES DIODES UHF A BARRIERE DE SCHOTTKY (ARTICLE DE SYNTHESE)RADZIEVSKIJ IA.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 89-93; BIBL. 1 P. 1/2Article

ELECTROLUMINESCENCE IN ZNSIP2 SCHOTTKY DIODES.SIEGEL W; BECHERER H; KIHNEL G et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 75-80; ABS. ALLEM.; BIBL. 17 REF.Article

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