HIGH-TEMPERATURE ANNEALING OF THE SIO₂/GAAS SYSTEM.OHDOMARI I; MIZUTANI S; KUME H et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 218-220; BIBL. 5 REF.Article

EFFET D'UNE IRRADIATION PAR DES ELECTRONS SUR LES PROPRIETES SUPERFICIELLES DE LA STRUCTURE SI-SIO₂KAPLAN GD; KOLESHKO VM; GURSKIJ LI et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 4; PP. 359-362; BIBL. 5 REF.Article

NEW STUDIES OF THE SI-SIO₂ INTERFACE USING AUGER SPUTTER PROFILING.HELMS CR; SPICER WE; JOHNSON NM et al.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 9; PP. 673-676; BIBL. 12 REF.Article

CORRELATION ENTRE LES PROPRIETES ELECTROPHYSIQUES DU SYSTEME SI-SIO₂ ET LA CINETIQUE DE LA CROISSANCE DE LA COUCHE D'OXYDE SUR LE SILICIUMARSLAMBEKOV VA; SAFAROV A.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 1; PP. 54-60; BIBL. 16 REF.Article

EFFET DE LA SOUS-COUCHE DE GEO₂ SUR LA CAPTURE DES PORTEURS DE CHARGE DANS LE SYSTEME GERMANIUM-SIO₂ PYROLITIQUEZABOTIN VM; KOZLOV SN; PLOTNIKOV GS et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 359-364; BIBL. 13 REF.Article

DIPOLE LAYERS AT THE METAL-SIO₂ INTERFACEHICKMOTT TW.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4269-4281; BIBL. 68 REF.Article

ANNEALING OF SI-SIO₂ INTERFACE STATES USING AR-ION-IMPLANT-DAMAGE-GETTERINGGOLJA B; MASSIBIAN AG.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1249-1254; BIBL. 27 REF.Article

SI/SIO₂ INTERFACE OXIDATION KINETICS: A PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS. II: COMPARISON WITH EXPERIMENT AND DISCUSSIONHO CP; PLUMMER JD.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1523-1530; BIBL. 50 REF.Article

STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO₂ INTERFACE USING AUGER SPUTTER PROFILINGHELMS CR; JOHNSON NM; SCHWARZ SA et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7007-7014; BIBL. 38 REF.Article

THE PHYSICAL STRUCTURE OF THE INTERFACE BETWEEN SINGLECRYSTAL GAAS AND ITS OXIDE FILMNAVRATIL K; OHLIDAL I; LUKES F et al.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 163-171; BIBL. 11 REF.Article

A HIGH-RESOLUTION ELECTRON MICROSCOPY STUDY OF THE SI-SIO₂ INTERFACE.KRIVANEK OL; SHENG TT; TSUI DC et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 7; PP. 437-439; BIBL. 15 REF.Article

ANODIC OXIDES ON GAAS. III. ELECTRICAL PROPERTIESBAYRAKTAROGLU B; HARTNAGEL HL.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 6; PP. 561-571; BIBL. 11 REF.Article

ETUDE DES PERTURBATIONS RADIATIVES DANS LES STRUCTURES SIO₂-SI PAR UNE METHODE D'EMISSION EXOELECTRONIQUEKORTOV VS; KRYMKO MM; MORDKOVICH VN et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 5; PP. 447-450; BIBL. 9 REF.Article

A MODEL FOR DOPED-OXIDE SOURCE DIFFUSION WITH A CHEMICAL REACTION AT THE SILICON-SILICON DIOXIDE INTERFACE.CHAKRABARTI UK.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 111-112; BIBL. 7 REF.Article

APPLICATION OF THE KELVIN METHOD FOR OXIDE CHARGE EVALUATION IN SI-SIO₂ STRUCTURES.BUCHHEIM G; JUNGHANS B; LIPPMANN H et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 2; PP. 585-591; ABS. ALLEM.; BIBL. 10 REF.Article

INFLUENCE DE L'ETAT DE LA SURFACE DU SILICIUM SUR LA LIMITE DE SEPARATION SI-SIO₂ A OXYDE PYROLYTIQUEGURSKIJ LI; RUMAK NV; CHERNYKH AG et al.1976; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; BYS; DA. 1976; NO 4; PP. 124; IN EXTENSO VINITI NO 1265Article

ETUDE DU SYSTEME INSB-OXYDE ANODIQUE PAR UNE METHODE L'ELLIPSOMETRIEUSOVA VA; SEMENENKO LV.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 1; PP. 66-72; BIBL. 5 REF.Article

DETERMINATION OF GOLD CONCENTRATION AND THE EFFECTIVE IMPURITY DOPING AT THE SILICON/SILICON-DIOXIDE INTERFACEMOGHAL GR.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 2; PP. 205-209; BIBL. 5 REF.Article

EFFECT OF REPEATED OXIDATION ON SILICON'S OPTICAL PROPERTIESPEYKOV PH.1978; C.R. ACAD. BULG. SCI.; BGR; DA. 1978; VOL. 31; NO 7; PP. 835-836; BIBL. 5 REF.Article

REDISTRIBUTION OF DOPANT IMPURITIES IN A SEMICONDUCTOR USING THE SERIES METHOD OF CHEN AND CHENHILL AC; BRADLEY R; ALLEN WG et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 8; PP. 1025-1031; BIBL. 33 REF.Article

DETECTION OF SIO₂^- IONS FROM SIO₂-SI INTERFACE BY MEANS OF SIMS.NAKAMURA K; HIROSE H; SHIBATA A et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1307-1311; BIBL. 5 REF.Article

THICKNESS EVALUATION OF SI/SIO₂ INTERFACES BY HE-BACKSCATTERING EXPERIMENTS.OFFERMANN P.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1890-1894; BIBL. 26 REF.Article

CHARGE INJECTION FROM A SURFACE DEPLETION REGION-THE AL₂O₃-SILICON SYSTEMKOLK J; HEASELL EL.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 223-228; BIBL. 16 REF.Article

RESONANT TUNNELING THROUGH SI/SIO₂ DOUBLE BARRIERS.HIROSE M; MORITA M; OSAKA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 561-564; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

THE RADIATION HARDNESS OF THE SI-SIO₂ INTERFACE AND CARRIER LOCALISATION IN THE INVERSION LAYER.PEPPER M.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 16; PP. L445-L450; BIBL. 12 REF.Article