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Results 1 to 25 of 888759

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GA AS MAOSFET MEMORY TRANSISTOR.BAYRAKTAROGLU B; COLQUHOUN A; HARTNAGEL HL et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 19-21; BIBL. 4 REF.Article

SEMICONDUCTOR INTEGRATED ETALON INTERFERENCE LASER WITH A CURVED RESONATORANTREASYAN A; SHYH WANG.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 7; PP. 562-564; BIBL. 15 REF.Article

RUNAWAY SELF-ABSORPTION IN MULTIKILOWATT CO2 LASERSKAYE AS; NAYLOR DL.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 641-642; BIBL. 3 REF.Article

DIFFRACTION COUPLED PHASE-LOCKED SEMICONDUCTOR LASER ARRAYKATZ J; MARGALIT S; YARIV A et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 7; PP. 554-556; BIBL. 16 REF.Article

NONLINEAR ASTROPHYSICAL DYNAMOS: MULTIPLE-PERIOD DYNAMO WAVE OSCILLATIONS AND LONG-TERM MODULATIONS OF THE 22 YEAR SOLAR CYCLEYOSHIMURA H.1978; ASTROPHYS. J.; USA; DA. 1978; VOL. 226; NO 1; PP. 706-719; BIBL. 42 REF.Article

CRISTALLOGEOMETRIE DE L'HERITAGE DES DISLOCATIONS AU COURS DES TRANSFORMATIONS MARTENSITIQUESBRAJNIN G EH; DRIBAN VA; LIKHACHEV VA et al.1979; FIZ. METALLOV METALLOVED.; SUN; DA. 1979; VOL. 47; NO 3; PP. 611-619; BIBL. 14 REF.Article

TUNNELLING THEORIES ET NON-VOLATILE SEMICONDUCTOR MEMORIES. = THEORIES DE L'EFFET TUNNEL DES MEMOIRES SEMICONDUCTRICES NON-VOLATILESFERRIS PRABHU AV.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 1; PP. 243-250; ABS. ALLEM.; BIBL. 19 REF.Article

CHARGE RETENTION OF FLOATING-GATE TRANSISTORS UNDER APPLIED BIAS CONDITIONSWANG ST.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 297-299; BIBL. 7 REF.Article

ESTIMATION OF GAAS STATIC RAM PERFORMANCEINO M; HIRAYAMA M; KURUMADA K et al.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 7; PP. 1130-1135; BIBL. 13 REF.Article

FERROELECTRIC FIELD EFFECT IN TE ON TGSE SUBSTRATEABHAI MANSINGH; KRUPANIDHI SB.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 91-95; BIBL. 5 REF.Article

PHOTOREFRACTIVE MATERIALS FOR OPTICAL STORAGE AND DISPLAY.KIM DM; RABSON TA; SHAH RR et al.1977; OPT. ENGNG; U.S.A.; DA. 1977; VOL. 16; NO 2; PP. 189-196; BIBL. 33 REF.Article

A 256 BIT NONVOLATILE STATIC RANDOM ACCESS MEMORY WITH MNOS MEMORY TRANSISTORS.SAITO S; ENDO N; UCHIDA Y et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 185-190; BIBL. 3 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

DRAM DESIGN USING THE TAPER-ISOLATED DYNAMIC RAM CELLLEISS JE; CHATTERJEE PK; HOLLOWAY TC et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 707-714; BIBL. 20 REF.Article

BASIC DESIGN OF A JOSEPHSON TECHNOLOGY CACHE MEMORYFARIS SM; HENKELS WH; VALSAMAKIS EA et al.1980; I.B.M. J. RES. DEVELOP.; USA; DA. 1980; VOL. 24; NO 2; PP. 143-154; BIBL. 30 REF.Article

Do this as 'my' memorial (Luke 22 :19) : Lucan soteriology of atonementCARPINELLI, F. G.The Catholic Biblical quarterly. 1999, Vol 61, Num 1, pp 74-91, issn 0008-7912Article

INFLUENCE DES PROPRIETES ELASTIQUES HEREDITAIRES D'UN RUBAN MAGNETIQUE SUR L'ETAT DE CONTRAINTE-DEFORMATION DE SES SPIRESGRABOVSKIJ AP.1983; MEHANIKA KOMPOZITNYH MATERIALOV; ISSN 507156; SUN; DA. 1983; NO 2; PP. 314-319; BIBL. 8 REF.Article

MEMORY EFFECTS IN TURBULENT FLOWS.BUILTJES PJH.1978; DELFT PROGR. REP.; NLD; DA. 1978; VOL. 3; NO 2; PP. 175-176Article

ETUDE DU PROCESSUS DE RETABLISSEMENT DE LA FORME DANS L'ALLIAGE CU-NI-ALLYUKOVA GA; KARPENYUK AN; PRESNYAKOV AA et al.1974; TRUDY INST. JADER. FIZ., ALMA-ATA; S.S.S.R.; DA. 1974 PARU 1975; VOL. 16; PP. 201-204; BIBL. 6 REF.Article

DIFFUSION DE LA LUMIERE DURANT L'EFFET DE MEMOIRE REVERSIBLE ELECTRIQUEMENT DANS LES CRISTAUX LIQUIDES SMECTIQUESALIEV DF; ZEJNALLY A KH.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 8; PP. 1669-1671; BIBL. 8 REF.Article

THE SHAPE MEMORY EFFECT = L'EFFET DE MEMOIRE MECANIQUEWAYMAN CM.1981; MET. FORUM; ISSN 0160-7952; USA; DA. 1981; VOL. 4; NO 3; PP. 135-141; BIBL. 24 REF.Article

MECHANISMUS UND ANWENDUNGEN DES FORMGEDAECHTNISEFFEKTES. = MECANISME ET APPLICATION DE L'EFFET DE MEMOIRE.MELTON KN; MERCIER O.1978; MATER. U. TECH.; CHE; DA. 1978; VOL. 78; NO 2; PP. 59-66; ABS. FRE; BIBL. 32 REF.Article

BREVET OBJET EN METAL DOUE DE MEMOIRE1978; ; FRA; DA. 1978-09-22; FR/A1/2.378.101; DEP.78-01770/1978-01-23; PR. GB/2.834-77/1977-01-24Patent

PHOTOELECTRIC MEMORY EFFECT IN GAASVINCENT G; BOIS D; CHANTRE A et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3643-3649; BIBL. 34 REF.Article

TI-NI AND TI-NI-X SHAPE MEMORY ALLOYS = ALLIAGES TI-NI ET TI-NI-X A MEMOIRE MECANIQUEPERKINS J.1981; MET. FORUM; ISSN 0160-7952; USA; DA. 1981; VOL. 4; NO 3; PP. 153-163; BIBL. 53 REF.Article

FIELD EFFECT TRANSISTORS.CAVE KJS; WILSON BLH.1977; SCI. PROGR.; G.B.; DA. 1977; VOL. 64; NO 255; PP. 323-339; BIBL. 9 REF.Article

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