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SOLID-STATE AMPLIFIERS AS TWT SUBSTITUTESIVANEK F; HSIEH CC; HAGA I et al.1980; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1980; VOL. 23; NO 16; PP. 23-98; 9 P.; BIBL. 12 REF.Article

DESIGN TECHNIQUE FOR BROADBAND MICROWAVE TRANSISTOR POWER AMPLIFIERSKOTZEBUE KL; EHLERS ER.1979; I.E.E. J. MICROWAVES OPT. ACOUST.; GBR; DA. 1979; VOL. 3; NO 3; PP. 121-127; BIBL. 11 REF.Article

ADVANCED SOLID STATE POWER AMPLIFIERS FOR COMPUTER CONTROLLED VIBRATION TEST SYSTEMS.HEINEMANN SO.1976; IN: ENVIRON. TECHNOL. 76. ANNU. TECH. MEET. 22. PROC.; PHILADELPHIA, PA.; 1976; MT. PROSPECT, ILL.; INST. ENVIRON. SCI.; DA. 1976; PP. 55-64; BIBL. 3 REF.Conference Paper

REFLEXIONSVERSTAERKER MIT MIKROWELLENTRANSISTOR = AMPLIFICATEUR A REFLEXION A TRANSISTOR HYPERFREQUENCEZBINDEN R.1980; COMMUNIC. GROUP. ET. TELECOMMUNIC. FOND. HASLER BERNE (A.G.E.N.); CHE; DA. 1980; NO 29; PP. 21-25; ABS. FRE/ENG; BIBL. 2 REF.Article

REFLECTION-MODE AMPLIFIER UTILISING GAAS ACTIVE-MEDIUM-PROPAGATION DEVICESFLEMING PL; CARLSON HE.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 24; PP. 787-788; BIBL. 3 REF.Article

ANALYSE ET OPTIMISATION SUR CALCULATEUR DES AMPLIFICATEURS A REFLEXION LARGE BANDE A DIODE DE TRANSIT A AVALANCHEBALYKO AK.1979; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1979; VOL. 22; NO 10; PP. 69-73; BIBL. 8 REF.Article

A NEW APPROACH TO FET POWER AMPLIFIERSSCHELLENBERG JM; YAMASAKI H.1982; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 3; PP. 51-66; 9 P.; BIBL. 8 REF.Article

1 KW SOLID-STATE POWER AMPLIFIERS.1977; MICROWAVE J.; U.S.A.; DA. 1977; VOL. 20; NO 2; PP. 44Article

IMPROVING THE POWER ADDED EFFICIENCY OF FET AMPLIFIERS OPERATING WITH VARYING-ENVELOPE SIGNALSSALEH AAM; COX DC.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 1; PP. 51-56; BIBL. 13 REF.Article

AMPLIFICATEUR DE PUISSANCE A LIGNES "MICROSTRIP"FERRAND D; RENAUD JF; JULIA Y et al.1978; TOUTE ELECTRON.; FRA; DA. 1978; NO 438; PP. 39-42; BIBL. 3 REF.Article

SOLID-STATE HIGH-POWER RF AMPLIFIERS: DESIGN AND DEVELOPMENT.COLOMBARI G; MARZOCCHI G; MOLINARI M et al.1976; TELETTRA; ITAL.; DA. 1976; NO 28; PP. 15-22; BIBL. 12 REF.Article

AMPLIFICATEUR PARAMETRIQUE REGENERATIF A FREQUENCE DE POMPAGE REDUITE A DIODES MOSZOLOTAREV N YA; EHTKIN VS.1976; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1976; VOL. 21; NO 7; PP. 1568-1570; BIBL. 3 REF.Article

A LOW-NOISE GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR AMPLIFIER FOR 4 GHZ RADIO.KNERR RH.1978; BELL SYST. TECH. J.; USA; DA. 1978; VOL. 57; NO 3; PP. 479-490; BIBL. 7 REF.Article

ETUDE THEORIQUE ET EXPERIMENTALE DES AMPLIFICATEURS HYPERFREQUENCES A DIODE A AVALANCHE EN ONDES MILLIMETRIQUES (26-40 GHZ).DE JAEGER JC.1977; ; S.L.; DA. 1977; PP. 1-78; H.T. 58; BIBL. 4 P.; (THESE DOCT. 3EME CYCLE; UNIV. SCI. TECH. LILLE)Thesis

TRANSISTORISIERTER LEISTUNGSVERSTAERLER FUER 1,2 BIS 1,4 GHZ = AMPLIFICATEUR DE PUISSANCE A TRANSISTORS POUR FREQUENCES DE 1,2 A 1,4 GHZFUCHSENTHALER K.1978; NACHR.-TECH. Z.; DEU; DA. 1978; VOL. 31; NO 10; PP. 730-732; ABS. ENGArticle

A 4 GHZ HIGH POWER, HIGH GAIN TRANSISTOR AMPLIFIER USING INTERNAL MATCHING TECHNOLOGY AND NEGATIVE RESISTANCE AMPLIFIER TECHNOLOGY.SAITO Y; AIHARA S; IGATA M et al.1978; N.E.C. RES. DEVELOP.; JAP.; DA. 1978; NO 48; PP. 53-60; BIBL. 3 REF.Article

ETUDE DES CARACTERISTIQUES AMPLITUDE-FREQUENCE DES AMPLIFICATEURS SOLIDES MICROONDES DU TYPE REFLECTEUR, OPERANT EN REGIME NON LINEAIREMALYSHEV VA; ROZDOBUD'KO VV.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 12; PP. 2563-2568; BIBL. 6 REF.Article

AMPLIFICATEURS HYPERFREQUENCES UTILISANT DES DIODES A AVALANCHE ET TEMPS DE TRANSIT POUR APPLICATION EN TELECOMMUNICATION.DOUMBIA J; DE JAEGER JC; SALMER G et al.1976; ANN. TELECOMMUNIC.; FR.; DA. 1976; VOL. 31; NO 11-12; PP. 373-386; ABS. ANGL.; BIBL. 16 REF.Article

SYNTHESE PARAMETRIQUE DES AMPLIFICATEURS SOLIDES ET DES GENERATEURS DE LA GAMME D'ONDES MILLIMETRIQUEKOTSERZHINSKIJ BA; PARFENOV AA; RADETSKIJ YU L et al.1980; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1980; VOL. 23; NO 10; PP. 24-31; BIBL. 13 REF.Article

TREATMENT OF NOISE-FIGURE CALCULATIONS IN MICROWAVE TRANSISTOR AMPLIFIERSYOUNG GP; SCANLAN JO.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 1; PP. 17-18; BIBL. 5 REF.Article

DESIGN AND SPECIFICATION CONSIDERATIONS OF GAAS FET LNASPOSNER RD.1979; MICROWAVE J.; USA; DA. 1979; VOL. 22; NO 5; PP. 69-75; (4 P.)Article

SUBSTRATE BIAS EFFECT OF C-MOS OPERATIONAL AMPLIFIER USING SIMOX TECHNOLOGYAKIYA M; KIMURA T.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 36-37; BIBL. 6 REF.Article

ANALYSIS AND DESIGN OF AN X-BAND ACTIVELY COMPENSATED IMPATT DIODE AMPLIFIERBAINS AS; AITCHISON CS.1979; IEEE TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 1; PP. 17-23; BIBL. 12 REF.Article

NON-LINEARITE ET INTERMODULATION DANS LES DISPOSITIFS ET SYSTEMES HYPERFREQUENCESMAZUMDER SR; NEY M.1978; BULL. ASS. SUISSE ELECTRICIENS; CHE; DA. 1978; VOL. 69; NO 12; PP. 639-642; ABS. GER; BIBL. 11 REF.Article

MONOLITHIC ELASTIC SURFACE WAVE AMPLIFIERS OF CONTINUOUS OPERATION.YAMANOUCHI K; SHIBAYAMA K.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 493-496; BIBL. 6 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

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