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Reliability of silicon nitride dielectric-based metal-insulator-metal capacitorsREMMEL, Thomas; RAMPRASAD, Rampi; ROBERTS, Doug et al.IEEE international reliability physics symposium. 2004, pp 573-574, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Emission électronique de diodes MIM de type Al-Al203-Au = Electronic emission of Al-Al2O3-Au type MIM diodesSEPTIER, A; MISEREY, F; RIPAUX, A et al.Le Vide, les couches minces. 1990, Vol 45, Num 253, pp 233-249, issn 0223-4335, 17 p.Article

Point contact spectroscopy on thermally shorted Al-Al2O3-metal junctionsSAUER, H; KECK, K.Solid state communications. 1984, Vol 50, Num 10, pp 907-910, issn 0038-1098Article

Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applicationsKAHN, Maurice; VALLEE, Christophe; DEFAY, Emmanuel et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 773-776, issn 0026-2714, 4 p.Conference Paper

Experiment and theory for switching in Al/V2O5/Al devicesNADKARNI, G. S; SHIRODKAR, V. S.Thin solid films. 1983, Vol 105, Num 2, pp 115-129, issn 0040-6090Article

An experimental verification of a simple distributed model of MIM capacitors for MMIC applicationsMONDAL, J. P.IEEE transactions on microwave theory and techniques. 1987, Vol 35, Num 4, pp 403-408, issn 0018-9480Article

Etude des processus dans les canaux formés isolés du système métal-diélectrique-métalVOROB'EV, G. A; LUBSANOV, R. B; TROYAN, P. E et al.Radiotehnika i èlektronika. 1985, Vol 30, Num 7, pp 1380-1383, issn 0033-8494Article

The gas sensitivity of device and emission currents in an electroformed MIM deviceSHARPE, R. G; PALMER, R. E.Journal of physics. D, Applied physics (Print). 1996, Vol 29, Num 3, pp 837-842, issn 0022-3727Article

On the calculation of the rupture potential of a filamentary system in an electroformed metal/insulator/metal structureRAY, A. K.Thin solid films. 1986, Vol 144, Num 2, pp L111-L114, issn 0040-6090Article

Dielectric switching with memory in thin films of stearic acidFULOP, W; GINIGE, R.Electronics Letters. 1985, Vol 21, Num 10, pp 439-441, issn 0013-5194Article

Caractéristiques courant-tension des structures Ti/TiO2/électrolyte et Ti/TiO2/métal: effet Schottky et claquage = I-V caracteristics of Ti/TiO2/electrolyte and Ti/TiO2/metal structures: Schottky effect and breakdownJERISIAN, R; MARCHENOIR, J. C; LOUP, J. P et al.Thin solid films. 1983, Vol 100, Num 2, pp 121-129, issn 0040-6090Article

High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 InsulatorsLIN, S. H; CHIANG, K. C; CHIN, Albert et al.IEEE electron device letters. 2009, Vol 30, Num 7, pp 715-717, issn 0741-3106, 3 p.Article

Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower ElectrodeCHENG, C. H; PAN, H. C; HUANG, C. C et al.IEEE electron device letters. 2008, Vol 29, Num 10, pp 1105-1107, issn 0741-3106, 3 p.Article

Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectricCHIANG, K. C; LAI, C. H; CHIN, Albert et al.IEEE electron device letters. 2005, Vol 26, Num 10, pp 728-730, issn 0741-3106, 3 p.Article

Differential negative resistance in metal/insulator/metal structures with an upper bilayer electrodeBERNEDE, J. C; ABACHI, T.Thin solid films. 1985, Vol 131, Num 3-4, pp L61-L64, issn 0040-6090Article

Improved Stress Reliability of Analog Metal―Insulator―Metal Capacitors Using TiO2/ZrO2 DielectricsLIN, S. H; CHIANG, K. C; YEH, F. S et al.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1287-1289, issn 0741-3106, 3 p.Article

Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization modelBECU, S; CREMER, S; AUTRAN, J. L et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2422-2426, issn 0167-9317, 5 p.Conference Paper

Analytical examination of the functional form of the experimental conduction characteristic for a formed MIM device showing VCNRRAY, A. K; HOGARTH, C. A; PANK, R. S et al.International journal of electronics. 1985, Vol 58, Num 5, pp 729-742, issn 0020-7217Article

Inelastic tunneling through optical barriersRAJASEKARAN, M; SANKAR, S; BAYNES, P. C et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4810-4812, issn 0163-1829Article

Propagation of a pulse of coherent current near the barrier in the metal-insulator-metal junctionNAGAE, M.Physical review. B, Condensed matter. 1982, Vol 26, Num 10, pp 5484-5505, issn 0163-1829Article

Some peculiarities in the spectral characteristics of metal/insulator/metal structures at constant biasesABDULLAYEV, A. G; KARNAUKHOV, A. M; ABDULLAYEV, K. I et al.Thin solid films. 1983, Vol 106, Num 3, pp L89-L90, issn 0040-6090Article

Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using Sm2O3/SiO2 Dielectric StackYANG, Jian-Jun; CHEN, Jing-De; WISE, Rick et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 460-462, issn 0741-3106, 3 p.Article

High-performance SrTiO3 MIM capacitors for analog applicationsCHIANG, K. C; HUANG, Ching-Chien; CHEN, G. L et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2312-2319, issn 0018-9383, 8 p.Article

On the evaluation of statistical parameters of a normal distribution of filamentary resistances in a formed MIM deviceRAY, A. K; HOGARTH, C. A.Journal of materials science letters. 1985, Vol 4, Num 12, pp 1522-1523, issn 0261-8028Article

Temperature dependence of voltage controlled negative resistance in an electroformed Cu-SiOx-Cu structureAL-ISMAIL, S. A. Y; HOGARTH, C. A.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp 559-563, issn 0031-8965Article

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