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Time and Frequency Domain Characterization of Transistor Self-HeatingMAKOVEJEV, Sergej; OLSEN, Sarah H; KILCHYTSKA, Valeriya et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 6, pp 1844-1851, issn 0018-9383, 8 p.Article

Papers Selected from the EUROSOI 2010 ConferenceCLERC, Raphaël; FAYNOT, Olivier.Solid-state electronics. 2011, Vol 59, Num 1, issn 0038-1101, 69 p.Conference Proceedings

Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulationsNIGRIN, S; ARMSTRONG, G. A; KRANTI, A et al.Solid-state electronics. 2007, Vol 51, Num 9, pp 1221-1228, issn 0038-1101, 8 p.Article

Selectively-formed high mobility SiGe-on-Insulator pMOSFETs with Ge-rich strained surface channels using local condensation techniqueTEZUKA, Tsutomu; NAKAHARAI, Shu; MORIYAMA, Yoshihiko et al.Symposium on VLSI Technology. sd, pp 198-199, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

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