Control of interface states at metal/6H-SiC(0001) interfacesTERAJI, Tokuyuki; HARA, Shiro.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 3, pp 035312.1-035312.19, issn 1098-0121Article

Photoelectric work function studies of carbonaceous films containing Ni nanocrystalsCZERWOSZ, E; DŁUZEWSKI, P; KUTNER, T et al.Thin solid films. 2003, Vol 423, Num 2, pp 161-168, issn 0040-6090, 8 p.Article

Self-compensation in CdF2 with Schottky barriersSHCHEULIN, A. S; ANGERVAKS, A. E; KUPCHIKOV, A. K et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 953-955, issn 0921-4526, 3 p.Conference Paper

Effects of dislocation on electron work function of metal surfaceLI, W; LI, D. Y.Materials science and technology. 2002, Vol 18, Num 9, pp 1057-1060, issn 0267-0836Article

Comparison between the noise properties of PtSi/p-Si_1-xGe_x and Pt/p-Si_1-xGe_x schottky contacts prepared by co-sputtering and thermal reactionOUACHA, H; NUR, O; FU, Y et al.Semiconductor science and technology. 2001, Vol 16, Num 4, pp 255-259, issn 0268-1242Article

Recovery of dry-etch damage in gallium-nitride Schottky barrier diodesLEE, Bok-Hyung; LEE, Seong-Dae; KIM, Sam-Dong et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 10, pp G592-G596, issn 0013-4651Article

Impedance spectroscopic analysis of forward biased metal oxide semiconductor tunnel diodes (MOSTD)MATSUMURA, M; HIROSE, Y.Applied surface science. 2001, Vol 175-76, pp 740-745, issn 0169-4332Conference Paper

Device grade B-doped homoepitaxial diamond thin filmsTAKEUCHI, D; YAMANAKA, S; WATANABE, H et al.Physica status solidi. A. Applied research. 2001, Vol 186, Num 2, pp 269-280, issn 0031-8965Conference Paper

High quality SiC applications in radiation dosimetryBRUZZI, M; NAVA, F; PINI, S et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 425-430, issn 0169-4332Conference Paper

Radiation hardness of SiC based ions detectors for influence of the relative protonsIVANOV, A. M; STROKAN, N. B; DAVYDOV, D. V et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 431-436, issn 0169-4332Conference Paper

The depth of depletion layer and the height of energy barrier on ZnO under hydrogenCHONG SOO HAN; JUN, Jin; KIM, Hyejung et al.Applied surface science. 2001, Vol 175-76, pp 567-573, issn 0169-4332Conference Paper

Engineered Schottky barriers on n-In_0.35Ga_0.65AsHORVATH, Zs. J; VO VAN TUYEN; FRANCHI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 248-251, issn 0921-5107Conference Paper

Effect of neutron bombardment on the electrical characteristics of n-GaAsHORVATH, Z. J; GOMBIA, E; PAL, D et al.SPIE proceedings series. 2000, pp 230-233, isbn 0-8194-3601-1Conference Paper

The annealing effect on the electrical property of the Al/undoped diamond filmHUANG, B.-R; WU, C.-H; SHEU, R.-F et al.Diamond and related materials. 2000, Vol 9, Num 1, pp 73-81, issn 0925-9635Article

Photoreflectance study of Au-Schottky contacts on n-GaNWEI LIU; LI, M.-F; CHUA, S.-J et al.Journal of electronic materials. 1999, Vol 28, Num 4, pp 360-363, issn 0361-5235Article

Metal contacts to n-type AlGaAs grown by molecular beam epitaxyZHANG, D. H.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 60, Num 3, pp 189-193, issn 0921-5107Article

The effect of surface space-charge on the shape of the potential barrierFENG, P. X.Surface science. 1999, Vol 429, Num 1-3, pp L469-L474, issn 0039-6028Article

Work function of refractory metals and its dependence upon working conditionsKAWANO, H; TAKAHASHI, T; TAGASHIRA, Y et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 105-108, issn 0169-4332Conference Paper

Barrier height determination for n-type 4H-SiC schottky contacts made using various metalsYAKIMOVA, R; HEMMINGSSON, C; MACMILLAN, M. F et al.Journal of electronic materials. 1998, Vol 27, Num 7, pp 871-875, issn 0361-5235Article

Charge transport mechanisms in Au-CdTe space-charge-limited Schottky diodesRAKHSHANI, A. E; MAKDISI, Y; MATHEW, X et al.Physica status solidi. A. Applied research. 1998, Vol 168, Num 1, pp 177-187, issn 0031-8965Article

Schottky barrier formation at ErAs/GaAs interfaces : A case of Fermi level pinning by surface statesLAMBRECHT, W. R. L; PETUKHOV, A. G; HEMMELMAN, B. T et al.Solid state communications. 1998, Vol 108, Num 6, pp 361-365, issn 0038-1098Article

Work function response of thin gold film surfaces to phosphine and arsineYOUNG SIR CHUNG; EVANS, K; GLAUNSINGER, W et al.Applied surface science. 1998, Vol 125, Num 1, pp 65-72, issn 0169-4332Article

Schottky barrier tunability in Al/ZnSe interfacesLAZZARINO, M; SCAREL, G; RUBINI, S et al.Journal of crystal growth. 1998, Vol 184-85, pp 193-198, issn 0022-0248Conference Paper

Barrier-height imaging of oxygen-adsorbed Si(111) 7 x 7 surfacesKUROKAWA, S; YUASA, M; SAKAI, A et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 3860-3863, issn 0021-4922, 1Conference Paper

Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopySUMIYA, T; MIURA, T; FUJINUMA, H et al.Applied surface science. 1997, Vol 117-18, pp 329-333, issn 0169-4332Conference Paper