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Results 1 to 25 of 1730434

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Evolution of water vapor from indium-tin-oxide thin films fabricated by various deposition processesSEKI, S; AOYAMA, T; SAWADA, Y et al.Journal of thermal analysis and calorimetry. 2002, Vol 69, Num 3, pp 1021-1029, issn 1388-6150, 9 p.Conference Paper

Laser-induced compound formation and transfer of stacked elemental layersTOTH, Z; SZÖRENYI, T.Thin solid films. 1994, Vol 245, Num 1-2, pp 40-43, issn 0040-6090Article

Static multikink solutions in a discrete Frenkel-Kontorova model with anharmonic interactionsMARKOV, I.Physical review. B, Condensed matter. 1993, Vol 48, Num 18, pp 14016-14019, issn 0163-1829Article

Probing buried interfaces with non-linear optical spectroscopyWILLIAMS, Christopher T; BEATTIE, David A.Surface science. 2002, Vol 500, Num 1-3, pp 545-576, issn 0039-6028Article

Liquids at InterfacesLÖWEN, H; HEINZ, K.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 21, issn 0953-8984, 445 p.Serial Issue

Low stress nitride as surface isolation in bipolar transistorsNANVER, L. K; FRENCH, P. J; GOUDENA, E. J. G et al.Materials science and technology. 1995, Vol 11, Num 1, pp 36-40, issn 0267-0836Conference Paper

Meeting on Recent Advances in Surface EngineeringCOLLIGON, John S.Vacuum. 2000, Vol 56, Num 3, pp 151-183, issn 0042-207XConference Proceedings

Analysis of surface particles by time-of-flight secondary ion mass spectrometryCHU, P. K; ODOM, R. W; REICH, D. F et al.Materials chemistry and physics. 1996, Vol 43, Num 2, pp 87-94, issn 0254-0584Article

Passivation of dopants of InGaP using ECR hydrogenationLEE, J. W; PEARTON, S. J; ABERNATHY, C. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 38, Num 3, pp 263-266, issn 0921-5107Article

The effect of anodizing temperature on anodic oxide formed on pure Al thin filmsRE-LONG CHIU; PENG-HENG CHANG; CHIH-HANG TUNG et al.Thin solid films. 1995, Vol 260, Num 1, pp 47-53, issn 0040-6090Article

Nanomodification of silicon (100) surface with scanning tunnelling microscopy using polysilicon on silicon structurePEREZ-MURANO, F; BARNIOL, N; ABADAL, G et al.Materials science and technology. 1995, Vol 11, Num 1, pp 85-89, issn 0267-0836Conference Paper

Caractérisation physico-chimique des films de Pt, Pd, Ni et Au déposés par pulvérisation cathodique = Physico-chemical caracterisation of thin films of Pt, Pd, Ni and Au prepared by dc-sputteringRafai, Mounir; Enea, O.1994, 150 p.Thesis

Surface fluorination of polyethylene films by different CF4 glow discharges : effects of frequency and electrode configurationKHAIRALLAH, Y; AREFI, F; AMOUROUX, J et al.Thin solid films. 1994, Vol 241, Num 1-2, pp 295-300, issn 0040-6090Conference Paper

European Materials Research Society 1995 Spring Meeting, Symposium N: Carbon, Hydrogen, and Oxygen in Silicon and in Other Elemental SemiconductorsBORGHESI, Alessandro; GÖSELE, Ulrich M; VANHELLEMONT, Jan et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, issn 0921-5107, 307 p.Conference Proceedings

Characterisation of semiconductor structures by high resolution X-ray diffractionSANZ-HERVAS, A; ABRIL, E. J; PAZ, D. I et al.Materials science and technology. 1995, Vol 11, Num 1, pp 72-79, issn 0267-0836Conference Paper

Study of floating alcohol monolayers in contact with a reservoir drop : phase diagram and application to Langmuir-Blodgett deposition without a movable barrierRENAULT, A; SCHULTZ, O; KONOVALOV, O et al.Thin solid films. 1994, Vol 248, Num 1, pp 47-50, issn 0040-6090Article

X-ray photoelectron spectroscopic studies on pyrolysis of thin films of plasma-polymerized acrylonitrileBHUIYAN, A. H; BHORASKAR, S. V; BADRINARAYANAN, S et al.Thin solid films. 1994, Vol 240, Num 1-2, pp 66-69, issn 0040-6090Article

Charge transfer through interfacial water inside an STM junctionYOON, Jae-Seok; BAE, Sang-Eun; YOON, Jung-Hyun et al.Electrochimica acta. 2005, Vol 50, Num 21, pp 4230-4233, issn 0013-4686, 4 p.Conference Paper

Properties of boron coatings used as plasma facing material of fusion deviceHINO, T; IWAMOTO, K; MATSUDA, T et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 518-521, issn 0040-6090Conference Paper

International conference on metallurgical coatings and thin filmsSARTWELL, B. D; MCGUIRE, G. E; JEHN, Hermann A et al.Thin solid films. 1994, Vol 253, Num 1-2, issn 0040-6090Conference Proceedings

Effect of electro- and stress migration forces on the 1/fα noise of patterned thin metal filmsCOTTLE, J. G; KLONARIS, N.Thin solid films. 1994, Vol 253, Num 1-2, pp 513-517, issn 0040-6090Conference Paper

Microheterogeneity of Fe-31Ni alloysYAKIMOV, I. I; IVANOVA, E. V.Physics of metals and metallography. 1995, Vol 79, Num 4, pp 458-460, issn 0031-918XArticle

A comparative surface composition analysis of amorphous alloys Fe―B―Si and Fe―P―C by the XPS, AES and SIMS techniquesKANUNNIKOVA, O. M; GIL'MUTDINOV, F. Z; KADIKOVA, A. KH et al.Physics of metals and metallography. 1992, Vol 74, Num 1, pp 44-46, issn 0031-918XArticle

Model for the outgassing of water from metal surfacesMINXU LI; DYLLA, H. F.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 4, pp 1702-1707, issn 0734-2101, 2Conference Paper

Development of a gate metal etch process for gallium arsenide wafersRAHUL BAMMI; CALE, T. S; GRIVNA, G et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 501-507, issn 0040-6090Conference Paper

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