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Results 1 to 25 of 38503

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REVERSE CMOS PROCESSINGMADDOX RL.1981; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1981; VOL. 24; NO 2; PP. 128-140; 5 P.; BIBL. 15 REF.Article

DIE PRUEFUNG VON CMOS-BAUELEMENTEN UND- SCHALTUNGEN.HERRMAN G.1975; ELEKTRONIK; DTSCH.; DA. 1975; VOL. 24; NO 9; PP. 103-106; BIBL. 1 REF.Article

SELF-REGISTERED GRADUALLY DOPED SOURCE DRAIN EXTENSION SHORT CHANNEL CMOS/SOS DEVICESCHEN ML; LEUNG BC; DINGWALL AGF et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 387-390; BIBL. 9 REF.Article

UTILISATION DE L'IMPLANTATION IONIQUE POUR LA CREATION D'UN CAISSON P DANS DU SILICIUM N: REALISATION DE TRANSISTORS COMPLEMENTAIRES.GARCIA M; PIAGUET J; ROUSSIN JC et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 278-284; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

A CMOS STRUCTURE USING BEAM-RECRYSTALLIZED POLYSILICONKAMINS TI.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 11; PP. 341-343; BIBL. 7 REF.Article

ANALYSE, A L'AIDE D'UNE CALCULATRICE NUMERIQUE, DU FONCTIONNEMENT DES CIRCUITS A FONCTIONS COMPLEXES UTILISANT DES TRANSISTORS MOS COMPLEMENTAIRESBAJKOV V TS; BUGRIMENKO GA; KARMAZINSKIJ AN et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOLEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 3-10; BIBL. 6 REF.Article

DES INSTRUMENTS ORIGINAUX POUR LE TEST DES CMOS: LES GENERATEURS D'IMPULSIONS.SIMON C.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 221; PP. 9-15Article

PERFORMANCE OF INTEGRATED DYNAMIC MOS AMPLIFIERSHOSTICKA BJ; HOEFFLINGER B; HERBST D et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 8; PP. 298-300; BIBL. 7 REF.Article

CMOS RELIABILITY.GALLACE LJ; PUJOL HL; SCHNABLE GL et al.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 2; PP. 287-304; BIBL. 2 P.Article

WHY DON'T THESE PARTS WORK IN OUR CIRCUITS. PREVENTING CMOS FAILURE.HART W.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 42-44Article

NEW CMOS TECHNOLOGIESHOEFFLINGER B; ZIMMER G.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 85-139; BIBL. 2 P.Conference Paper

TERNARY RATE-MULTIPLIERSMOUFTAH HT; SMITH KC; VRANESIC ZG et al.1980; IEEE TRANS. COMPUT.; ISSN 0018-9340; USA; DA. 1980; VOL. 29; NO 10; PP. 929-931; BIBL. 11 REF.Article

DEVELOPMENTS IN CMOS MEMORYWATSON D.1979; MICROELECTRON. AND RELIABIL.; GBR; DA. 1979 PUBL. 1980; VOL. 19; NO 5-6; PP. 449-452Conference Paper

CMOS 4K STATIC RAM.ONOYAMA A; KAWAKAMI T; ASAHI K et al.1977; TOSHIBA REV., INTERNATION. ED.; JAP.; DA. 1977; NO 110; PP. 23-29; BIBL. 6 REF.Article

A TRANSIENT ANALYSIS OF LATCHUP IN BULK CMOSTROUTMAN RR; ZAPPE HP.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 170-179; BIBL. 6 REF.Article

COS/MOS DIVIDERS WITH SYMMETRICAL OUTPUTS.SUMMERS GJ; JONES P.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 3; PP. 40-44 (3P.).Article

MOS AND BIPOLAR ICS IN CONSUMER APPLICATIONS.PENNEY JD.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 379-386; (SEMINEX SEMIN., LONDON; 1974)Conference Paper

CMOS-TECHNIK. = TECHNIQUE MOS COMPLEMENTAIRE1974; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1974; VOL. 23; NO 15; PP. 504-505; BIBL. 2 REF.Article

NOVEL DYNAMIC C.M.O.S. AMPLIFIER FOR SWITCHED-CAPACITOR INTEGRATORSFELSEN LB.1979; ELECTRON LETTERS; GBR; DA. 1979; VOL. 15; NO 7; PP. 532-533; BIBL. 5 REF.Article

GETTING THE MOST OUT OF C-MOS DEVICES FOR ANALOG SWITCHING JOBS.THIBODEAUX E.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 26; PP. 69-74Article

CMOS INTEGRATED CIRCUIT RELIABILITYSCHNABLE GL; COMIZZOLI RB.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 1; PP. 33-50; BIBL. 145 REF.Article

MICROPOWER SWITCHED-CAPACITOR OSCILLATORVITTOZ EA.1979; I.E.E.E.J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 622-624; BIBL. 5 REF.Article

CMOS-LEITUNGSTREIBER WIRD ZUM TRISTATE-BAUELEMENT = CONTROLEUR DE CONDUCTION A CMOS UTILISE COMME COMPOSANT TRISTABLEBUURMA G.1979; ELEKTRONIK; DEU; DA. 1979; VOL. 28; NO 23; PP. 80Article

CMOS PERFORMANCE, COST MAKE DIGITAL JUST PART OF ITS STORY1978; ELECTRON. DESIGN; USA; DA. 1978; VOL. 26; NO 23; PP. 52-56Article

AMELIORATION DE LA DENSITE D'INTEGRATION DES CIRCUITS DE GRANDE COMPLEXITE A T MOS SUR SSI.SUAT JP; MONTIER M; GRIS Y et al.1978; DGRST-7670652; FR.; DA. 1978; PP. 1-17; H.T. 18; BIBL. 4 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

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