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MEASUREMENT OF RICHARDSON CONSTANT OF GAAS SCHOTTKY BARRIERSSRIVASTAVA AK; ARORA BM; GUHA S et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 185-191; BIBL. 23 REF.Article

RICHARDSON CONSTANT OF AL- AND GAAS SCHOTTKY BARRIER DIODES.BORREGO JM; GUTMANN RJ; ASHOK S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 3; PP. 169-172; BIBL. 10 REF.Article

On the Richardson constant of intimate metal-GaAs Schottky barriersMISSOUS, M; RHODERICK, E. H; WOOLF, D. A et al.Semiconductor science and technology. 1992, Vol 7, Num 2, pp 218-221, issn 0268-1242Article

On the Richardson constant for aluminium/gallium arsenide Schottky diodesMISSOUS, M; RHODERICK, E. H.Journal of applied physics. 1991, Vol 69, Num 10, pp 7142-7145, issn 0021-8979, 4 p.Article

Temperature dependent I―V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's modelKORUCU, Demet; TURUT, Abdulmecit; EFEOGLU, Hasan et al.Physica. B, Condensed matter. 2013, Vol 414, pp 35-41, issn 0921-4526, 7 p.Article

Double barrier heights in 5,6,11,12-tetraphenylnaphthacene (rubrene) based organic Schottky diodeBARIŞ, Behzad; FARUK YÜKSEL, Ömer; TUĞLUOĞLU, Nihat et al.Synthetic metals. 2013, Vol 180, pp 38-42, issn 0379-6779, 5 p.Article

A new Richardson plot for non-ideal Schottky diodesBHUIYAN, A. S; MARTINEZ, A; ESTEVE, D et al.Thin solid films. 1988, Vol 161, Num 1-2, pp 93-100, issn 0040-6090Article

Electrical properties of Mg-Zn3P2 contactsSZATKOWSKI, J; SIERANSKI, K.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp 473-477, issn 0031-8965Article

Variation in the effective Richardson constant of a metal-silicon contact due to metal-film thicknessTOYAMA, N.Journal of applied physics. 1988, Vol 63, Num 8, pp 2720-2724, issn 0021-8979, 1Article

Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layerSETO, M; ROCHEFORT, C; DE JAGER, S et al.SPIE proceedings series. 1999, pp 222-230, isbn 0-8194-3100-1Conference Paper

Variation of the effective Richardson constant of Pt-Si Schottky diode due to annealing treatmentTOYAMA, N; TAKAHASHI, T; MURAKAMI, H et al.Applied physics letters. 1985, Vol 46, Num 6, pp 557-559, issn 0003-6951Article

Experimental Richardson constant of metal-semiconductor Schottky barrier contactsTAM, N. T; CHOT, T.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp K91-K95, issn 0031-8965Article

Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature rangeSUBHASH CHAND; JITENDRA KUMAR.Semiconductor science and technology. 1995, Vol 10, Num 12, pp 1680-1688, issn 0268-1242Article

Bias dependence of Schottky barrier height in GaAs from internal photoemission and current-voltage characteristicsISHIDA, T; IKOMA, H.Journal of applied physics. 1993, Vol 74, Num 6, pp 3977-3982, issn 0021-8979Article

Current transport in Pt Schottky contacts to a-plane n-type GaNPHARK, Soo-Hyon; KIM, Hogyoung; KEUN MAN SONG et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 16, issn 0022-3727, 165102.1-165102.5Article

Barrier inhomogeneities in Au/CdSe thin film Schottky diodesPANCHAL, C. J; DESAI, M. S; KHERAJ, V. A et al.Semiconductor science and technology. 2008, Vol 23, Num 1, issn 0268-1242, 015003.1-015003.6Article

Study on electrical characteristics of metal/boron nitride/metal and boron nitride/silicon structuresKIMURA, Chiharu; YAMAMOTO, Tomohide; SUGINO, Takashi et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 1404-1407, issn 0925-9635Conference Paper

Stability of sulfur-treated n-InP Schottky structures, studied by current-voltage measurementsAHAITOUF, A; BATH, A; LOSSON, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 52, Num 2-3, pp 208-215, issn 0921-5107Article

Schottky barriers on anisotropic semiconductor GaTeBOSE, D. N; PAL, S.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1997, Vol 75, Num 2, pp 311-318, issn 1364-2812Article

Ruthenium and ruthenium-based contacts to GaAsMYBURG, G; BARNARD, W. O; MEYER, W. E et al.Applied surface science. 1993, Vol 70-71, Num 1-4, pp 511-514, issn 0169-4332, BConference Paper

Reverse I-V characteristics of Au/semi-insulating GaAs(100)LUO, Y. L; CHEN, T. P; FUNG, S et al.Solid state communications. 1997, Vol 101, Num 9, pp 715-720, issn 0038-1098Article

Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1-xAs cap layerHORVATH, ZS; BOSACCHI, A; FRANCHI, S et al.Vacuum. 1995, Vol 46, Num 8-10, pp 959-961, issn 0042-207XConference Paper

Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctionsHORVATH, ZS. J; BOSACCHI, A; FRANCHI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 429-432, issn 0921-5107Conference Paper

On the Richardson constant of intimate metal-GaAs (111)B Schottky diodes growtn by molecular beam epitaxyPILKINGTON, S. J; MISSOUS, M; WOOLF, D. A et al.Journal of applied physics. 1993, Vol 74, Num 10, pp 6256-6260, issn 0021-8979Article

IL NUMERO DI RICHARDSON IN RELAZIONE ALLA CAT (CLEAR AIR TURBULENCE) SPERIMENTATA NELL' ALTA TROPOSFERA SUL MEDITERRANEO NORD-OCCIDENTALE E SULLA SARDEGNA. = NOMBRE DE RICHARDSON EN RELATION AVEC LA CAT (TURBULENCE EN CIEL CLAIR), EXPERIMENTATION DANS LA HAUTE TROPOSPHERE AU-DESSUS DE LA MEDITERRANEE NORD-OUEST ET LA SARDAIGNESOLLAI A.1977; RIV. METEOROL. AERONAUT.; ITAL.; DA. 1977; VOL. 37; NO 2; PP. 85-94; ABS. FR. ANGL.; BIBL. 14 REF.Article

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