A TEMPERATURE MODEL FOR THE GAAS MESFETCURTICE WR; YONG HOON YUN.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 954-962; BIBL. 23 REF.Article

FABRICATION TECHNOLOGY OF STABLE SCHOTTKY BARRIER GATES FOR GALLIUM ARSENIDE MESFETSIDA M; UCHIDA M; SHIMADA K et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1099-1105; BIBL. 10 REF.Article

PHYSICS OF SHORT-GATE GAAS MESFET'S FROM HYDROSTATIC PRESSURE STUDIESKIEHL RA; OSBOURN GC.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 977-983; BIBL. 36 REF.Article

SCHOTTKY CONTACT FABRICATION FOR GAAS MESFET'SMIERS TH.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1795-1799; BIBL. 26 REF.Article

GATE-CONTROLLED SOURCE-TO-DRAIN RESISTANCE OF FET'S. = RESISTANCE SOURCE-DRAIN COMMANDEE PAR LA GRILLE DANS LES TRANSISTORS A EFFET DE CHAMPHONIG WM.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 732-733; BIBL. 7 REF.Article

THE EFFECT OF LOGIC CELL CONFIGURATION, GATELENGTH, AND FAN-OUT ON THE PROPAGATION DELAYS OF GAAS MESFET LOGIC GATESNAMORDI MR; DUNCAN WM.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 402-410; BIBL. 7 REF.Article

POWER-LIMITING BREAKDOWN EFFECTS IN GAAS MESFET'SFRENSLEY WR.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 962-970; BIBL. 18 REF.Article

RELIABILITY STUDY OF GAAS MESFET'S.IRIE T; NAGASAKO I; KOHZU H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 321-328; BIBL. 4 REF.Article

GAAS DUAL-GATE SCHOTTKY-BARRIER FET'S FOR MICROWAVE FREQUENCIES.ASAI S; MURAI F; KODERA H et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 897-904; BIBL. 14 REF.Article

SI AND GAAS 0.5 MU M-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORSBAECHTOLD W; DAETWYLER K; FORSTER T et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 232-234; BIBL. 6 REF.Serial Issue

OPTIMIZATION OF LOW-NOISE GAAS MESFETS'SFUKUI H; DILORENZO JV; HEWITT BS et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1034-1037; BIBL. 11 REF.Article

DEVICE QUALITY N-TYPE LAYERS PRODUCED BY ION IMPLANTATION OF TE AND S INTO GAAS.STOLTE CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 585-587; BIBL. 2 REF.Conference Paper

GAAS MESFET PERFORMANCE.HUANG HC; DRUKIER I; CAMISA RL et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 235-237; BIBL. 4 REF.Conference Paper

RECENT ADVANCES IN HIGH-FREQUENCY FIELD-EFFECT TRANSISTORS.LIECHTI CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1974; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 6-10; BIBL. 18 REF.Conference Paper

RELIABILITY STUDIES OF ONE-MICRON SCHOTTKY GATE GAAS FET.KOZU H; NAGASAKO T; OGAWA M et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 247-250; BIBL. 1 REF.Conference Paper

FABRICATION DE TRANSISTORS A EFFET DE CHAMP AU GAAS A GRILLE SCHOTTKYYAMAGUCHI T; KOMIYA Y; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 465-471; ABS. ANGL.; BIBL. 3 REF.Article

STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAASMESFET'SITOH T; YANAI H.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1037-1045; BIBL. 28 REF.Article

POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE.FUKUTA M; SUYAMA K; SUZUKI H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 312-317; BIBL. 14 REF.Article

A MEMORY A CELL ARRAY WITH NORMALLY OFF A TYPE SCHOTTKY A BARRIER FET'SDRANGEID KE; BROOM RF; JUTZI W et al.1972; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 4; PP. 277-282; BIBL. 13 REF.Serial Issue

SCHOTTKY-BARRIER COUPLED SCHOTTCHY-BARRIER GATE CRAAS FETLOGICHASHIZUME N; YAMADA H.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 1; PP. 51-52; BIBL. 6 REF.Article

SOLID STATE DEVICES-MICROWAVE III-V DEVICES1978; INTERNATIONAL ELECTRON DEVICES MEETING/1978-12-04/WASHINGTON DC; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1978; 124-151; BIBL. DISSEM.Conference Paper

TECHNOLOGIE DE REALISATION DES TRANSISTORS A EFFET DE CHAMP DE PETITES DIMENSIONS.ARNODO C; NUZILLAT G.1975; REV. TECH. THOMSON-CSF; FR.; DA. 1975; VOL. 7; NO 2; PP. 359-442; ABS. ANGL. ALLEM.; BIBL. 2 P.Article

THE CHARACTERISTICS AND APPLICATIONS OF A V-SHAPED NOTCHED-CHANNEL FIELD-EFFECT TRANSISTOR (VFET).MOK TD; SALAMA CAT.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 2; PP. 159-166; H.T. 1; BIBL. 16 REF.Article

EQUIVALENT CIRCUIT OF GAAS DUAL GATE MESFETSTSIRONIS C; MEIERER R.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 477-479; BIBL. 6 REF.Article

DIRECT COMPARISON OF THE ELECTRON-TEMPERATURE MODEL WITH THE PARTICLE-MESH (MONTE CARLO) MODEL FOR THE GAAS MESFETCURTICE WR.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1942-1943; BIBL. 7 REF.Article