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EFFECT OF LONG-TERM STRESS ON IGFET DEGRADATIONS DUE TO HOT ELECTRON TRAPPINGMATSUMOTO H; SAWADA K; ASAI S et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 923-928; BIBL. 22 REF.Article

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STEADY STATE ANALYSIS OF FIELD EFFECT TRANSISTORS VIA THE FINITE ELEMENT METHOD.COTTRELL PE; BUTURLA EM.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 51-54; BIBL. 11 REF.Conference Paper

TECHNOLOGIE ET APPLICATIONS DES COMMUTATEURS ANALOGIQUES1982; ELECTRON. APPL.; ISSN 0243-489X; FRA; DA. 1982; NO 22; PP. 31-45; BIBL. 8 REF.Article

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SIMPLE I/V MODEL FOR SHORT-CHANNEL I.G.F.E.T.S. IN THE TRIODE REGION.YAU LD.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 2; PP. 44-45; BIBL. 5 REF.Article

ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFETEL MANSY YA.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 331-340; BIBL. 11 REF.Article

DRAIN-VOLTAGE DEPENDENCE OF IGFET TURN-ON VOLTAGE.LUONG MO DANG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 825-830; BIBL. 9 REF.Article

THICK FILM COMPATIBLE TRANSISTORS.AWATAR SINGH.1977; J. SCI. INDUSTR. RES.; INDIA; DA. 1977; VOL. 36; NO 3; PP. 118-120; BIBL. 7 REF.Article

CARRIER-DENSITY FLUCTUATIONS AND THE IGFET MOBILITY NEAR THRESHOLD.BREWS JR.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2193-2203; BIBL. 28 REF.Article

IGFET HOT ELECTRON EMISSION MODEL.PHILLIPS A JR; O'BRIEN RR; JOY RC et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 39-42; BIBL. 10 REF.Conference Paper

POWER-DELAY ENERGY COMPARISON OF BIPOLAR AND IGFET DIGITAL DEVICES AND CIRCUITS. = COMPARAISON DU PRODUIT PUISSANCE-ENERGIE DE RETARD POUR LES CIRCUITS ET DISPOSITIFS NUMERIQUES BIPOLAIRES OU AVEC DES FET A PORTE ISOLEEJOHNSON EO.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1044-1045; BIBL. 4 REF.Article

THE SPACE-CHARGE DOSIMETER. GENERAL PRINCIPLE OF A NEW METHOD OF RADIATION DETECTION.HOLMES SIEDLE A.1974; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1974; VOL. 121; NO 1; PP. 169-179; BIBL. 20 REF.Article

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OFFSET CHANNEL INSULATED GATE FIELD-EFFECT TRANSISTORSCHEN CY; CHO AY; GOSSARD AC et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 360-362; BIBL. 16 REF.Article

RESISTIVE-GATE-INDUCED THERMAL NOISE IN IGFET'STHORNBER KK.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 4; PP. 414-415; BIBL. 3 REF.Article

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