Coherent islands and microstructural evolutionDRUCKER, J.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 18203-18206, issn 0163-1829Article

Image analysis in physics-sensitivity analysis of morphological methods and their application in thin film physicsSIMEK, Jiri; HRACH, Rudolf.Thin solid films. 2004, Vol 466, Num 1-2, pp 16-20, issn 0040-6090, 5 p.Article

Comparative study on texture development of MgO and YSZ films grown by inclined substrate deposition techniqueHASEGAWA, Katsuya; NAKAMURA, Yuichi; IZUMI, Teruo et al.Physica. C. Superconductivity and its applications. 2002, Vol 378-81, pp 955-959, 5 p., 2Conference Paper

Time development during growth and relaxation of amorphous carbon films. Tight-binding molecular dynamics studyKOHARY, K; KUGLER, S.Journal of non-crystalline solids. 2002, Vol 299302, pp 824-829, issn 0022-3093, bConference Paper

Études par diffraction haute résolution et réflectivité de films minces épitaxiés = Epitaxial thin films studies by high resolution diffraction and reflectivityBAULES, P; CASANOVE, M. J; ROUCAU, C et al.Journal de physique. IV. 2002, Vol 97, pp pr6.247-pr6.253, issn 1155-4339Conference Paper

Cobalt-induced polycrystalline silicon film growthKIM, Joondong; PIWOWAR, Alan M; NOWAK, Richard et al.Applied surface science. 2007, Vol 253, Num 6, pp 3053-3056, issn 0169-4332, 4 p.Article

Morphological evolution during epitaxial thin film growth : Formation of 2D islands and 3D moundsEVANS, J. W; THIEL, P. A; BARELT, M. C et al.Surface science reports. 2006, Vol 61, Num 1-2, pp 1-128, issn 0167-5729, 128 p.Article

Structure evolution during processing of polycrystalline filmsTHOMPSON, C. V.Annual review of materials science. 2000, Vol 30, pp 159-190, issn 0084-6600Article

General predictive syntheses of cubic, hexagonal, and lamellar silica and titania mesostructured thin filmsALBERIUS, Peter C. A; FRINDELL, Karen L; HAYWARD, Ryan C et al.Chemistry of materials. 2002, Vol 14, Num 8, pp 3284-3294, issn 0897-4756, 11 p.Article

DLC composite thin films by sputter depositionTING, Jyh-Ming; LEE, Howard.Diamond and related materials. 2002, Vol 11, Num 3-6, pp 1119-1123, issn 0925-9635Conference Paper

Textures and structures of vapor depositsLEE, D. N.Journal of materials science. 1999, Vol 34, Num 11, pp 2575-2582, issn 0022-2461Article

Microstructure characterization in dc sputtered a-SiC:H films by inert gas effusion measurementsSALEH, R; MUNISA, L; BEYER, W et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 517-520, issn 0022-3093, 4 p.Conference Paper

Reactive epitaxy of beryllium on Si(1 1 1)-(7 × 7)HITE, D. A; TANG, S.-J; SPRUNGER, P. T et al.Chemical physics letters. 2003, Vol 367, Num 1-2, pp 129-135, issn 0009-2614, 7 p.Article

On the structure of epitaxial YH_x filmsREMHOF, A; SONG, G; LABERGERIE, D et al.Journal of alloys and compounds. 2002, Vol 330-32, pp 276-279, issn 0925-8388Article

Effect of high temperature-pressure on GaAs layers grown on vicinal Si substratesBAK-MISIUK, J; DYNOWSKA, E; ADAMCZEWSKA, J et al.Crystal research and technology (1979). 2001, Vol 36, Num 8-10, pp 997-1003, issn 0232-1300Conference Paper

Ultrathin V films on Fe(100) : growth and interfacial alloyingIGEL, T; PFANDZELTER, R; WINTER, H et al.Solid state communications. 2000, Vol 116, Num 9, pp 477-481, issn 0038-1098Article

Surface engineering design : modelling surface engineering systems for improved tribological performanceBELL, T; MAO, K; SUN, Y et al.Surface & coatings technology. 1998, Vol 108-09, Num 1-3, pp 360-368, issn 0257-8972Conference Paper

Structure and phase transitions of Ph1-xCaxTiO3 thin filmsGAKH, S. G; MVASNIKOVA, T. P; BUNINA, O. A et al.Inorganic materials. 1997, Vol 33, Num 4, pp 416-418, issn 0020-1685Article

High-resolution X-ray diffraction study of ZnSe/GaAs heterostructures grown by molecular beam epitaxySOU, I. K; MOU, S. M; CHAN, Y. W et al.Journal of crystal growth. 1995, Vol 147, Num 1-2, pp 39-46, issn 0022-0248Article

A modified computer model for the formation of porous siliconHE, Z. J; HUANG, Y. P; KWOR, R et al.Thin solid films. 1995, Vol 265, Num 1-2, pp 96-100, issn 0040-6090Article

In-situ X-ray imaging of III-V strained-layer relaxation processesWHITEHOUSE, C. R; CULLIS, A. G; LACEY, G et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 85-91, issn 0022-0248, 1Conference Paper

A ¹³C isotopic tracing study of a-C:H thin-film growthPERRIERE, J; VICKRIDGE, I; LAURENT, A et al.Applied physics. A, Solids and surfaces. 1994, Vol 58, Num 2, pp 187-190, issn 0721-7250Article

Effect of strain on the growth mechanism and structure of ultra-thin Cu films on Pd(110)BARNES, C; GLEESON, M.Surface science. 1994, Vol 319, Num 1-2, pp 157-164, issn 0039-6028Article

Preparation of PZT film on (100)Pt/(100) MgO substrate by CVD and its propertiesOTSU, M; FUNAKUBO, H; SHINOZAKI, K et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 1994, Vol 102, Num 2, pp 128-132, issn 0914-5400Article

Etude par microscopie électronique à haute résolution de multicouches métalliques à fort désaccord paramétrique: systèmes Au/Ni, Ag/Ni et Au/Co = High resolution electron microscopy study of metallic multilayers with large misfit: Au/Ni, Ag/Ni and Au/Co systemsBayle, Pascale; Thibault, J.1994, 170 p.Thesis