Optimization of transconductance in JFETs and MESFETsSOLHEIM, A. G; ROULSTON, D. J.Solid-state electronics. 1987, Vol 30, Num 12, pp 1267-1269, issn 0038-1101Article

Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article

Small-signal characteristics of InP junction FET'sKRUPPA, W; BOOS, J. B.IEEE electron device letters. 1987, Vol 8, Num 5, pp 223-225, issn 0741-3106Article

n-channel lateral insulated gate transistors: Part I-steady-state characterisPATTANAYAK, D. N; ROBINSON, A. L; CHOW, T. P et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1956-1963, issn 0018-9383Article

GaAs substrate materiel assessment using a high lateral resolution MESFET test patternSCHINK, H; PACKEISER, G; MALUENDA, J et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp L369-L372, issn 0021-4922, part 2Article

On the photoresponsitivity of GaAs MESFETsPAPAIOANNOU, G. J.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K99-K102, issn 0031-8965Article

Optically controlled characteristics in an ion-implanted silicon MESFETSINGH, V. K; CHATTOPADHYAY, S. N; PAL, B. B et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 707-711, issn 0038-1101Article

Schottky-barrier field-effect transistors of 3C-SiCYOSHIDA, S; DAIMON, H; YAMANAKA, M et al.Journal of applied physics. 1986, Vol 60, Num 8, pp 2989-2991, issn 0021-8979Article

The effects of heavy doping on I-V characteristics of GaAs JFET and MESFET devicesTENG, K. W; LI, S. S.Solid-state electronics. 1986, Vol 29, Num 7, pp 683-686, issn 0038-1101Article

Theoretische Grundlagen beim Einsatz von iononsensitiven Feldeffekttransistoren = Bases théoriques pour la conception de transistors à effet de champ sensibles aux ions = Theoretical background for ionosensible field effect transistor designWILDNER, O; BOGDANOVA, N.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1985, Vol 27, Num 2, pp 283-288, issn 0372-7610Article

A nonlinear method to estimate model parameters of junction field-effect transistorIKEDA, H; MA HUAI-JIAN; YAMAMOTO, H et al.IEEE transactions on instrumentation and measurement. 1986, Vol 35, Num 3, pp 272-277, issn 0018-9456Article

Analysis of capacitance and transconductance frequency dispersions in MESFETS for surface characterizationGRAFFEUIL, J; HADJOUB, Z; FORTEA, J. P et al.Solid-state electronics. 1986, Vol 29, Num 10, pp 1087-1097, issn 0038-1101Article

Characteristics of separated-gate JFETsNANVER, L. K; GOUDENA, E. J. G.Electronics Letters. 1986, Vol 22, Num 23, pp 1244-1246, issn 0013-5194Article

Fully implanted p-column InP field-effect transistorWOODHOUSE, J. D; DONNELLY, J. P.IEEE electron device letters. 1986, Vol 7, Num 6, pp 387-389, issn 0741-3106Article

New mechanism of gate current in heterostructure insulated gate field-effect transistorsJUN HO BAEK; SHUR, M; DANIELS, R. R et al.IEEE electron device letters. 1986, Vol 7, Num 9, pp 519-521, issn 0741-3106Article

The 22-year variation of geomagnetic activity : implications for the polar magnetic field of the SunRUSSELL, C. T; MULLIGAN, T.Geophysical research letters. 1995, Vol 22, Num 23, pp 3287-3288, issn 0094-8276Article

Cut-and-paste organic FET customized ICs for application to artificial skinSOMEYA, Takao; KAWAGUCHI, Hiroshi; SAKURAI, Takayasu et al.IEEE International Solid-State Circuits Conference. 2004, pp 288-289, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A new VDMOSFET structure with reduced reverse transfer capacitanceSAKAI, T; MURAKAMI, N.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1381-1386, issn 0018-9383, 6 p.Article

A process-parameter-based circuit simulation model for ion-implanted MOSFET's and MESFET'sKARMALKAR, S; BHAT, K. N.IEEE journal of solid-state circuits. 1989, Vol 24, Num 1, pp 139-145, issn 0018-9200, 7 p.Article

Conductance fluctuations from the local alteration of a hopping pathSTROH, R. J; PEPPER, M.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 44, pp 8481-8489, issn 0953-8984, 9 p.Article

Stationary charge domain in GaAs MESFETs: dimensional and electrical characterisationKRETLY, L. C; GIAROLA, A. J.Electronics Letters. 1989, Vol 25, Num 13, pp 813-814, issn 0013-5194, 2 p.Article

Subthreshold conduction in uniformly doped epitaxial GaAs MESFET'sDARLING, R. B.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1264-1273, issn 0018-9383, 10 p.Article

A recessed-gate In_0.52Al_0.48As/n⁺-In_0.53Ga_0.47As MIS-type FETDEL ALAMO, J. A; MIZUTANI, T.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 646-650, issn 0018-9383, 5 p.Article

Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradationHEREMANS, P; WITTERS, J; GROESENEKEN, G et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1318-1335, issn 0018-9383, 18 p.Article

STEM-EDX dopant profiling of S-D implants in submicron FETsRENTELN, P; AST, D. G; MELE, T. C et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 12, pp 3828-3836, issn 0013-4651, 9 p.Article