The gate current noise of junction field effect transistorsSTOCKER, J. D; JONES, B. K.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 1, pp 93-102, issn 0022-3727Article

Active matching with common-gate MESFET'sNICLAS, K. B.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 6, pp 492-499, issn 0018-9480Article

Determination of the active-layer temperature near the channel of GaAs MESFET'SBOURDONNAIS, L; BEROLO, O; FORTIN, E et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1141-1147, issn 0038-1101Article

Experimental microwave-signal-propagation study on GaAs MESFET's using especially fabricated transistor structuresFRICKE, K; HARTNAGEL, H. L.IEEE electron device letters. 1985, Vol 6, Num 3, pp 151-153, issn 0741-3106Article

On state modeling of power JFET structures in the bipolar modeBELLONE, S.Solid-state electronics. 1985, Vol 28, Num 4, pp 317-324, issn 0038-1101Article

The effects of substrate gettering in GaAs MESFET performanceFAA-CHING WANG; BUJATTI, M.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2839-2843, issn 0018-9383Article

Negative resistance characteristics in JFETARIVOLI, T; RAMKUMAR, K; SATYAM, M et al.AEU. Archiv für Elektronik und Übertragungstechnik. 1984, Vol 38, Num 5, issn 0001-1096, 340Article

Temperature behavior of insulated gate transistor characteristicsJAYANT BALIGA, B.Solid-state electronics. 1985, Vol 28, Num 3, pp 289-297, issn 0038-1101Article

Calculation of amplification factor u of static induced transistorXIONG CHENGKUN.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 3, pp 87-93, issn 0143-7100Article

Coupled transmission line analysis for harmonic generation in travelling-wave MESFETSTIWARI, D. C; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 687-692, issn 0020-7217Article

Experimental study of MESFET travelling-wave structuresFRICKE, K; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 629-638, issn 0020-7217Article

Frequency dispersion of sidegating transconductance of GaAs junction field-effect transistorsROACH, J. W; WIEDER, H. H; ZULEEG, R et al.Applied physics letters. 1985, Vol 47, Num 12, pp 1285-1287, issn 0003-6951Article

Current-drift suppressed InP MISFETs with new gate insulatorMIKAMI, O; OKAMURA, M; YAMAGUCHI, E et al.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp 1408-1409, issn 0021-4922, 1Article

Coupled-mode analysis of travelling-wave MESFETSKRETSCHMER, K.-H; GRAMBOW, P; SIGULLA, T et al.International journal of electronics. 1985, Vol 8, Num 4, pp 639-648, issn 0020-7217Article

Examination of millimetre-wave frequency-gain behaviour of GaAs MESFETsKROWNE, C. M; NEIDERT, R. E.International journal of electronics. 1985, Vol 58, Num 3, pp 407-412, issn 0020-7217Article

FET characterization using gated-TLM structureBAIER, S. M; SHUR, M. S; LEE, K et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2824-2829, issn 0018-9383Article

Monte-Carlo particle model study of the influence of gate metallisation and gate geometry on the AC characteristics of GaAs MESFETsMOGLESTUE, C.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 6, pp 193-202, issn 0143-7100Article

Low-resistance submicrometre gates used for self alignmentISMAIL, K; BENEKING, H.Electronics Letters. 1984, Vol 20, Num 22, pp 942-943, issn 0013-5194Article

Field-effect transistor sensitive to dipolar moleculesBLACKBURN, G. F; LEVY, M; JIRI JANATA et al.Applied physics letters. 1983, Vol 43, Num 7, pp 700-701, issn 0003-6951Article

A simplified microwave model of the GaAs dual-gate MESFETSCOTT, J. R; MINASIAN, R. A.IEEE transactions on microwave theory and techniques. 1984, Vol 32, Num 3, pp 243-248, issn 0018-9480Article

Optimization of transconductance in JFETs and MESFETsSOLHEIM, A. G; ROULSTON, D. J.Solid-state electronics. 1987, Vol 30, Num 12, pp 1267-1269, issn 0038-1101Article

The 22-year variation of geomagnetic activity : implications for the polar magnetic field of the SunRUSSELL, C. T; MULLIGAN, T.Geophysical research letters. 1995, Vol 22, Num 23, pp 3287-3288, issn 0094-8276Article

Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article

Small-signal characteristics of InP junction FET'sKRUPPA, W; BOOS, J. B.IEEE electron device letters. 1987, Vol 8, Num 5, pp 223-225, issn 0741-3106Article

n-channel lateral insulated gate transistors: Part I-steady-state characterisPATTANAYAK, D. N; ROBINSON, A. L; CHOW, T. P et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1956-1963, issn 0018-9383Article