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Modélisation des transistors à effet de champ au GaAs avec barrière de Schottky et un canal à dopage ioniqueSTAROSEL'SKIJ, V. I.Radiotehnika i èlektronika. 1984, Vol 29, Num 9, pp 1814-1819, issn 0033-8494Article

Field-theoretic analysis of wave propagation on FET electrodes including losses and small-signal amplificationHEINRICH, W; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 613-627, issn 0020-7217Article

Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface chargeBARTON, T. M; LADBROOKE, P. H.IEEE electron device letters. 1985, Vol 6, Num 3, pp 117-119, issn 0741-3106Article

Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article

Active matching with common-gate MESFET'sNICLAS, K. B.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 6, pp 492-499, issn 0018-9480Article

Determination of the active-layer temperature near the channel of GaAs MESFET'SBOURDONNAIS, L; BEROLO, O; FORTIN, E et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1141-1147, issn 0038-1101Article

Optically controlled characteristics in an ion-implanted silicon MESFETSINGH, V. K; CHATTOPADHYAY, S. N; PAL, B. B et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 707-711, issn 0038-1101Article

Schottky-barrier field-effect transistors of 3C-SiCYOSHIDA, S; DAIMON, H; YAMANAKA, M et al.Journal of applied physics. 1986, Vol 60, Num 8, pp 2989-2991, issn 0021-8979Article

Model of threshold-voltage fluctuations in GaAs MESFET'sANHOLT, R; SIGMON, T. W.IEEE electron device letters. 1987, Vol 8, Num 1, pp 16-18, issn 0741-3106Article

Enhanced temperature dependence of MESFET characteristics by backgate and sidegate biasingOGAWA, M.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1987, Vol 70, Num 9, pp 847-856, issn 0387-236XArticle

Large-signal FET simulation using time domain and harmonic balance methodsBRAZIL, T; EL-RABAIE, S; CHOO, E et al.IEE proceedings. Part H. Microwaves, antennas and propagation. 1986, Vol 133, Num 5, pp 363-367, issn 0950-107XArticle

Superior low-noise GaAs MESFET's with graded channel grown by MBENAIR, V. K; TAM, G; CURLESS, J. A et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1393-1395, issn 0018-9383Article

GaAs substrate materiel assessment using a high lateral resolution MESFET test patternSCHINK, H; PACKEISER, G; MALUENDA, J et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp L369-L372, issn 0021-4922, part 2Article

On the photoresponsitivity of GaAs MESFETsPAPAIOANNOU, G. J.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K99-K102, issn 0031-8965Article

Optimization of transconductance in JFETs and MESFETsSOLHEIM, A. G; ROULSTON, D. J.Solid-state electronics. 1987, Vol 30, Num 12, pp 1267-1269, issn 0038-1101Article

Distributions of 1/f noise in an epitaxial GaAs MESFETHASHIGUCHI, S; AOKI, N; OHKUBO, H et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 745-749, issn 0038-1101Article

Surface influence on the conductance DLTS spectra of GaAs MESFET'sBLIGHT, S. R; WALLIS, R. H; THOMAS, H et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1447-1453, issn 0018-9383Article

Analysis of capacitance and transconductance frequency dispersions in MESFETS for surface characterizationGRAFFEUIL, J; HADJOUB, Z; FORTEA, J. P et al.Solid-state electronics. 1986, Vol 29, Num 10, pp 1087-1097, issn 0038-1101Article

The SINFET-A schottky injection MOS-gated power transistorSIN, J. K. O; SALAMA, C. A. T.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1940-1947, issn 0018-9383Article

A novel basis for quantum calculations in MESFET and JFET devicesBERGGREN, K.-F; NEWSON, D. J.Semiconductor science and technology. 1986, Vol 1, Num 4, pp 246-255, issn 0268-1242Article

Stability of Schottky barriers at high temperatures for use in GaAs MESFET technologyALLAN, D. A.IEE proceedings. Part I. Solid-state and electron devices. 1986, Vol 133, Num 1, pp 18-24, issn 0143-7100Article

A large barrier height schottky contact between amorphous Si-Ge-B and GaAsSUZUKI, M; MURASE, K; ASAI, K et al.Japanese journal of applied physics. 1983, Vol 22, Num 11, pp L709-L711, issn 0021-4922Article

Modeling gate modulation effects on fet electrical characteristics with arbitrary doping profilesMIN-WEN CHIANG; CHOMA, J. JR; KAO, C et al.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 701-707, issn 0038-1101Article

Bias dependence of low-frequency gate current noise in GaAs MESFETsPERANSIN, J. M; VIGNAUD, P; RIGAUD, D et al.Electronics Letters. 1989, Vol 25, Num 7, pp 439-440, issn 0013-5194, 2 p.Article

Experimental microwave-signal-propagation study on GaAs MESFET's using especially fabricated transistor structuresFRICKE, K; HARTNAGEL, H. L.IEEE electron device letters. 1985, Vol 6, Num 3, pp 151-153, issn 0741-3106Article

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