kw.\*:(%22Transistor effet champ barri%C3%A8re Schottky%22)
Results 1 to 25 of 1125937
Selection :
Modélisation des transistors à effet de champ au GaAs avec barrière de Schottky et un canal à dopage ioniqueSTAROSEL'SKIJ, V. I.Radiotehnika i èlektronika. 1984, Vol 29, Num 9, pp 1814-1819, issn 0033-8494Article
Field-theoretic analysis of wave propagation on FET electrodes including losses and small-signal amplificationHEINRICH, W; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 613-627, issn 0020-7217Article
Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface chargeBARTON, T. M; LADBROOKE, P. H.IEEE electron device letters. 1985, Vol 6, Num 3, pp 117-119, issn 0741-3106Article
Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article
Active matching with common-gate MESFET'sNICLAS, K. B.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 6, pp 492-499, issn 0018-9480Article
Determination of the active-layer temperature near the channel of GaAs MESFET'SBOURDONNAIS, L; BEROLO, O; FORTIN, E et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1141-1147, issn 0038-1101Article
Optically controlled characteristics in an ion-implanted silicon MESFETSINGH, V. K; CHATTOPADHYAY, S. N; PAL, B. B et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 707-711, issn 0038-1101Article
Schottky-barrier field-effect transistors of 3C-SiCYOSHIDA, S; DAIMON, H; YAMANAKA, M et al.Journal of applied physics. 1986, Vol 60, Num 8, pp 2989-2991, issn 0021-8979Article
Model of threshold-voltage fluctuations in GaAs MESFET'sANHOLT, R; SIGMON, T. W.IEEE electron device letters. 1987, Vol 8, Num 1, pp 16-18, issn 0741-3106Article
Enhanced temperature dependence of MESFET characteristics by backgate and sidegate biasingOGAWA, M.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1987, Vol 70, Num 9, pp 847-856, issn 0387-236XArticle
Large-signal FET simulation using time domain and harmonic balance methodsBRAZIL, T; EL-RABAIE, S; CHOO, E et al.IEE proceedings. Part H. Microwaves, antennas and propagation. 1986, Vol 133, Num 5, pp 363-367, issn 0950-107XArticle
Superior low-noise GaAs MESFET's with graded channel grown by MBENAIR, V. K; TAM, G; CURLESS, J. A et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1393-1395, issn 0018-9383Article
GaAs substrate materiel assessment using a high lateral resolution MESFET test patternSCHINK, H; PACKEISER, G; MALUENDA, J et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp L369-L372, issn 0021-4922, part 2Article
On the photoresponsitivity of GaAs MESFETsPAPAIOANNOU, G. J.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K99-K102, issn 0031-8965Article
Optimization of transconductance in JFETs and MESFETsSOLHEIM, A. G; ROULSTON, D. J.Solid-state electronics. 1987, Vol 30, Num 12, pp 1267-1269, issn 0038-1101Article
Distributions of 1/f noise in an epitaxial GaAs MESFETHASHIGUCHI, S; AOKI, N; OHKUBO, H et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 745-749, issn 0038-1101Article
Surface influence on the conductance DLTS spectra of GaAs MESFET'sBLIGHT, S. R; WALLIS, R. H; THOMAS, H et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1447-1453, issn 0018-9383Article
Analysis of capacitance and transconductance frequency dispersions in MESFETS for surface characterizationGRAFFEUIL, J; HADJOUB, Z; FORTEA, J. P et al.Solid-state electronics. 1986, Vol 29, Num 10, pp 1087-1097, issn 0038-1101Article
The SINFET-A schottky injection MOS-gated power transistorSIN, J. K. O; SALAMA, C. A. T.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1940-1947, issn 0018-9383Article
A novel basis for quantum calculations in MESFET and JFET devicesBERGGREN, K.-F; NEWSON, D. J.Semiconductor science and technology. 1986, Vol 1, Num 4, pp 246-255, issn 0268-1242Article
Stability of Schottky barriers at high temperatures for use in GaAs MESFET technologyALLAN, D. A.IEE proceedings. Part I. Solid-state and electron devices. 1986, Vol 133, Num 1, pp 18-24, issn 0143-7100Article
A large barrier height schottky contact between amorphous Si-Ge-B and GaAsSUZUKI, M; MURASE, K; ASAI, K et al.Japanese journal of applied physics. 1983, Vol 22, Num 11, pp L709-L711, issn 0021-4922Article
Modeling gate modulation effects on fet electrical characteristics with arbitrary doping profilesMIN-WEN CHIANG; CHOMA, J. JR; KAO, C et al.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 701-707, issn 0038-1101Article
Bias dependence of low-frequency gate current noise in GaAs MESFETsPERANSIN, J. M; VIGNAUD, P; RIGAUD, D et al.Electronics Letters. 1989, Vol 25, Num 7, pp 439-440, issn 0013-5194, 2 p.Article
Experimental microwave-signal-propagation study on GaAs MESFET's using especially fabricated transistor structuresFRICKE, K; HARTNAGEL, H. L.IEEE electron device letters. 1985, Vol 6, Num 3, pp 151-153, issn 0741-3106Article