A new two-step recess technology using SiN_x passivation and pt-buried gate process and its application to 0.15μm Al_0.6InAs/In_0.65GaAs HEMTsKIM, Dae-Hyun; LEE, Kang-Min; LEE, Jae-Hak et al.DRC : Device research conference. 2004, pp 69-70, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Comparative analysis of hot-phonon effects in nitride and arsenide channels for HEMTsMATULIONIS, A.DRC : Device research conference. 2004, pp 145-146, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTsCHINI, A; BUTTARI, D; COFFIE, R et al.DRC : Device research conference. 2004, pp 33-34, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Super low-noise HEMTs with a T-shaped WSi_x gateHANYU, I; ASAI, S; NUNOKAWA, M et al.Electronics Letters. 1988, Vol 24, Num 21, pp 1327-1328, issn 0013-5194Article

dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistorsPALMATEER, L. F; TASKER, P. J; SCHAFF, W. J et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2139-2141, issn 0003-6951, 3 p.Article

Linearity performance of GaN HEMTs with field platesWU, Y.-F; SAXLER, A; WISLEDER, T et al.DRC : Device research conference. 2004, pp 35-36, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contactsIKOSSI-ANASTASIOU, K; EZIS, A; RAI, A. K et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1786-1792, issn 0018-9383, 1Article

Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTsSANABRIA, Christopher; HONGTAO XU; PALACIOS, Tomas et al.DRC : Device research conference. 2004, pp 43-44, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTsPALACIOS, T; RAJAN, S; SHEN, L et al.DRC : Device research conference. 2004, pp 75-76, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Frequency performance enhancement of AlGaN/GaN HEMTs on diamondDIDUCK, Q; FELBINGER, J; EASTMAN, L. F et al.Electronics letters. 2009, Vol 45, Num 14, pp 758-759, issn 0013-5194, 2 p.Article

Use of multichannel heterostructures to improve the access resistance and f_T linearity in GaN-based HEMTsPALACIOS, T; CHINI, A; BUTTARI, D et al.DRC : Device research conference. 2004, pp 41-42, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Improvement in norm-reducing Newton methods for circuit simulationYEAGER, H. R; DUTTON, R. W.IEEE transactions on computer-aided design of integrated circuits and systems. 1989, Vol 8, Num 5, pp 538-546, issn 0278-0070, 9 p.Article

Thermal, electrical and environmental reliability of InP HEMTs and GaAs PHEMTsDEL ALAMO, J. A; VILLANUEVA, A. A.International Electron Devices Meeting. 2004, pp 1019-1022, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Applications of MBE grown PHEMTsDILORENZO, J. V; LAUTERWASSER, B; ZAITLIN, M. P et al.Journal of crystal growth. 1997, Vol 175-76, pp 1-7, issn 0022-0248, 1Conference Paper

Input voltage sensitivity of GaAs/GaAlAs HEMT latched comparatorFENG, S; SEITZER, D.Electronics Letters. 1992, Vol 28, Num 3, pp 233-235, issn 0013-5194Article

32-GHZ cryogenically cooled HEMT low-noise amplifiersDUH, K. H. G; KOPP, W. F; HO, P et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1528-1535, issn 0018-9383, 8 p.Article

94 GHz low-noise HEMTCHAO, P. C; DUH, K. H. G; HO, P et al.Electronics Letters. 1989, Vol 25, Num 8, pp 504-505, issn 0013-5194, 2 p.Article

Influence of quantum-well width on device performance of Al_0.30Ga_0.70As/In_0.25Ga_0.75As (on GaAs) MODFET'sNGUYEN, L. D; RADULESCU, D. C; FOISY, M. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 833-838, issn 0018-9383, 6 p.Article

Observation and mechanism of kink effect in depletion-mode AlGaAs/GaAs and AlGaAs/GaInAs HEMTsTHOMASIAN, A; REZAZADEH, A. A; HIPWOOD, L. G et al.Electronics Letters. 1989, Vol 25, Num 5, pp 351-353, issn 0013-5194, 3 p.Article

Semi-conducteur : Picogiga perce avec les hautes fréquences. Entretien = Semiconductor: Picogiga is becoming famous with the high frequenciesBRESIN, S; MICHEL, J.-M.Salles propres & maîtrise de la contamination. 2000, Num 8, pp 42-47, issn 1291-6978Article

Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETsKETTERSON, A. A; LASKAR, J; BROCK, T. L et al.Electronics Letters. 1989, Vol 25, Num 7, pp 440-442, issn 0013-5194, 3 p.Article

Beiträge zur Modellierung des High Electron Mobility Transistor = Contributions à la modélisation du transistor à haute mobilité électronique = Contributions to high electron mobility transistor modelingIVANOVA, P; HOLZ, G.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1988, Vol 37, Num 3, pp 208-211, issn 0043-6925Article

Noise modeling of 2-DEGFETsMISHRA, M; MURALIDHARAN, R; HARSH et al.SPIE proceedings series. 1998, pp 925-928, isbn 0-8194-2756-X, 2VolConference Paper

Switching characteristics of a modulation-doped field effect transistorSEN, S; PANDEY, M. K; GUPTA, R. S et al.SPIE proceedings series. 1998, pp 937-940, isbn 0-8194-2756-X, 2VolConference Paper

Quantum modelling of charge distribution in single and multiple heterojunction modfetsVOINIGESCU, S.International journal of electronics. 1989, Vol 66, Num 2, pp 227-245, issn 0020-7217, 19 p.Article