Inventario di archivio dell' osservatorio astronomico di Brera 1726-19171987, 270 p.Book

WOLTE 3 European Workshop on Low Temperature ElectronicsBROGIATO, Luciana; CAMIN, Daniel V; PESSINA, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, issn 1155-4339, 331 p.Conference Proceedings

L'AMORE E LA GUERRA NELLA CULTURA INDIANA = L'amour et la guerre dans la culture indienne = Love and War in Indian CultureQuaderni di acme. 2009, Num 109, issn 0393-3288, 101-165 [101 p.]Conference Paper

Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementCITTERIO, M; MANFREDI, P. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.155-Pr3.159, issn 1155-4339Conference Paper

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 KNIU, G; GOGINENI, U; CRESSLER, J. D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.103-Pr3.107, issn 1155-4339Conference Paper

Performance of a SQUID read-out system for superconducting tunnel junctionsMARTIN, D. D. E; PEACOCK, A.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.225-Pr3.228, issn 1155-4339Conference Paper

Perspectives of the cryo-electronics for the year 2000GUTIERREZ-D., E. A; CLAEYS, C; SIMOEN, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.315-Pr3.320, issn 1155-4339Conference Paper

Resonance of low-frequency collective plasma oscillations at phase-slip centersCHURILOV, G. E.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.301-Pr3.304, issn 1155-4339Conference Paper

Temperature dependence of hot-carrier effects in 0.2 μm N- and P-channel fully-depleted unibond MOSFETsRENN, S. H; RAYNAUD, C; BALESTRA, F et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.13-Pr3.16, issn 1155-4339Conference Paper

The temperature influence of substrate current in submicron N-channel MOSFETsCHEN, S.-H; CHEN, S.-L; CHUNG, S.-T et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.53-Pr3.56, issn 1155-4339Conference Paper

Band tails and their influence on the performance of bipolar SiGe devices at low temperaturesSOKOLIC, S; FERK, B; AMON, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.113-Pr3.116, issn 1155-4339Conference Paper

Cryogenic amplification system for ultra-low noise measurementsLOMBARDI, G; MACUCCI, M; GIANNETTI, R et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.185-Pr3.188, issn 1155-4339Conference Paper

Eddy-current nondestructive measurements with different HTS-SQUID spatial orientationsVALENTINO, M; PEPE, G; RUOSI, A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.249-Pr3.252, issn 1155-4339Conference Paper

Features of indirect-band-to-band tunneling in an insulated-gate lateral pn junction device on a SIMOX substrate with an ultrathin 10-nm-thick silicon layerOMURA, Y.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.63-Pr3.66, issn 1155-4339Conference Paper

HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterizationJIN, Y.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.131-Pr3.134, issn 1155-4339Conference Paper

SiGe HBT simulation based on m_p^* (T, Na, X_GE) numerical model HEMSOKOLIC, S; FERK, B; AMON, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.117-Pr3.118, issn 1155-4339Conference Paper

Submillimeter wave detection with high temperature superconducting bolometersGAUGUE, A; CARISTAN, E; ROBBES, D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.263-Pr3.266, issn 1155-4339Conference Paper

Superconducting-semiconducting electronics (SSE) for broadband SQUID applicationsUCHAIKIN, S.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.221-Pr3.224, issn 1155-4339Conference Paper

A cryogenic GaAs PHEMT/ferroelectric Ku-band tunable oscillatorROMANOFSKY, R. R; VAN KEULS, F. W; MIRANDA, F. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.171-Pr3.174, issn 1155-4339Conference Paper

A new method to extract the effective trap density at the buried oxide/underlying substrate interface in enhancement-mode SOI MOSFETs at low temperaturesPAVANELLO, M. A; MARTINO, J. A..Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.45-Pr3.48, issn 1155-4339Conference Paper

Capabilities of antenna-coupled superconducting microbolometersLEONOV, V. N.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.267-Pr3.270, issn 1155-4339Conference Paper

Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 KALAWNEH, I; SIMOEN, E; BIESEMANS, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.3-Pr3.8, issn 1155-4339Conference Paper

Express-control system of superconducting microcircuits fabrication technology by anodization spectroscopy methodVOJTOVICH, I; NAVALA, S; SHPILEVOY, P et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.309-Pr3.312, issn 1155-4339Conference Paper

Miniature temperature sensors based on Ge filmsMITIN, V. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.193-Pr3.195, issn 1155-4339Conference Paper

Modeling of the low temperature electron distribution function in ultra-fast transient situations for semiconductor devicesCHENG, M.-C.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.67-Pr3.70, issn 1155-4339Conference Paper