Computer simulation of hillock growthMUÊLLER-PFEIFFER, S; ANKLAM, H.-J.Vacuum. 1990, Vol 42, Num 1-2, pp 113-116, issn 0042-207X, 4 p.Conference Paper

Calculation of the depth profiles associated with high energy ion implantationBURENKOV, A. F; KOMAROV, F. F.Vacuum. 1990, Vol 42, Num 1-2, pp 13-15, issn 0042-207X, 3 p.Conference Paper

Self-annealing in ion-implanted Si and GaAsKOMAROV, F. F.Vacuum. 1990, Vol 42, Num 1-2, pp 101-106, issn 0042-207X, 6 p.Conference Paper

Structure and emission characteristics of AuSi alloy field ion sourceDRANDAROV, N; NIKOLOV, B; VALCHOVSKA, T et al.Vacuum. 1990, Vol 42, Num 1-2, pp 95-99, issn 0042-207XConference Paper

Maskless etching of ion modified chromium filmsSPANGENBERG, B; POPOVA, K; SPASOVA, E et al.Vacuum. 1990, Vol 42, Num 1-2, pp 125-127, issn 0042-207X, 3 p.Conference Paper

Pulsed ion beams for modification of metal surface propertiesFOMINSKII, V. Y; MARKEEV, A. M; NEVOLIN, V. N et al.Vacuum. 1990, Vol 42, Num 1-2, pp 73-74, issn 0042-207X, 2 p.Conference Paper

Auger electron spectroscopic analysis of In_xGa_1-xAsSPASSOV, G. S.Vacuum. 1990, Vol 42, Num 1-2, pp 155-158, issn 0042-207X, 4 p.Conference Paper

Quantitative Auger electron spectroscopic analysis of titanium nitridesVIGNES, J. L; LANGERON, J. P; GRIGOROV, G. I et al.Vacuum. 1990, Vol 42, Num 1-2, pp 151-153, issn 0042-207X, 3 p.Conference Paper

2C or not 2C?GUIVARCH, Céline; HALLEGATTE, Stéphane.Global environmental change. 2013, Vol 23, Num 1, pp 179-192, issn 0959-3780, 14 p.Article

Boron nitride film formation by means of dynamic mixing methodFUJIMOTO, F.Vacuum. 1990, Vol 42, Num 1-2, pp 67-72, issn 0042-207X, 6 p.Conference Paper

Investigation of arsenic-implanted silicon by optical reflectometrySTAVROV, V. I; VARBANOV, R; VASILIEV, O et al.Vacuum. 1990, Vol 42, Num 1-2, pp 107-109, issn 0042-207X, 3 p.Conference Paper

Dry patterning through masks of organic materialsTOCHITSKY, E. I; OBUKHOV, E. I; SHARENDO, A. I et al.Vacuum. 1990, Vol 42, Num 1-2, pp 117-120, issn 0042-207XConference Paper

Aperture effect in plasma etching of deep silicon trenchesABACHEV, M. K; BARYSHEV, Y. P; LUKICHEV, V. F et al.Vacuum. 1990, Vol 42, Num 1-2, pp 129-131, issn 0042-207X, 3 p.Conference Paper

Low voltage magnetron discharges for thin film preparationSTEENBECK, K; STEINBEISS, E; WINKLER, S et al.Vacuum. 1990, Vol 42, Num 1-2, pp 39-41, issn 0042-207X, 3 p.Conference Paper

The sputter deposition process : a Monte-Carlo studyHEBERLEIN, T; KRAUTHEIM, G; WUTTKE, W et al.Vacuum. 1990, Vol 42, Num 1-2, pp 47-51, issn 0042-207X, 5 p.Conference Paper

Atomic layer epitaxy : 12 years laterHERMAN, M. A.Vacuum. 1990, Vol 42, Num 1-2, pp 61-66, issn 0042-207X, 6 p.Conference Paper

Effect of low-energy ion flows on the physico-mechanical properties and morphology of iron surfacesCHEKANOV, A. L; ROMANOV, I. G; PEREVEZENTSEV, V. N et al.Vacuum. 1990, Vol 42, Num 1-2, pp 85-87, issn 0042-207X, 3 p.Conference Paper

Incident ion energy spectrum and target sputtering rate in dc planar magnetronCZEKAJ, D; GORANCHEV, B; HOLLMANN, E. K et al.Vacuum. 1990, Vol 42, Num 1-2, pp 43-45, issn 0042-207XConference Paper

Structural transformations and long-range effects in alloys caused by gas ion bombardmentKREINDEL, Y. E; OVCHINNIKOV, V. V.Vacuum. 1990, Vol 42, Num 1-2, pp 81-83, issn 0042-207X, 3 p.Conference Paper

Angular and energy dependencies of secondary ion emission from polycrystalline and single-crystal surfacesKOSYACHKOV, A. A.Vacuum. 1990, Vol 42, Num 1-2, pp 143-145, issn 0042-207X, 3 p.Conference Paper

Modification of physico-mechanical properties of metals and metallic coatings by ion implantationRADJABOV, T. D.Vacuum. 1990, Vol 42, Num 1-2, pp 163-168, issn 0042-207X, 6 p.Conference Paper

Theoretical analysis of heat flow and structural changes during electron beam irradiation of steelPETROV, P; MLADENOV, G.Vacuum. 1990, Vol 42, Num 1-2, pp 29-32, issn 0042-207X, 4 p.Conference Paper

Shadow electron beam 1 : 1 scale printing with 0.1 μm size elementsMAKHMUTOV, R. K; SIDORUK, S. N; VALIEV, K. A et al.Vacuum. 1990, Vol 42, Num 1-2, pp 133-137, issn 0042-207XConference Paper

Energy and angular distributions of ions backscattered from the sidewalls during the implantation into deep trenchesPOSSELT, M; OTTO, G.Vacuum. 1990, Vol 42, Num 1-2, pp 17-19, issn 0042-207X, 3 p.Conference Paper

Study of a model system for asymmetric induction in [2C+2C] photoannelation reactionsBRUNEEL, K; DE KEUKELEIRE, D; VANDEWALLE, M et al.Journal of the Chemical Society. Perkin transactions. I. 1984, Num 8, pp 1697-1700, issn 0300-922XArticle