Thermal stability of AuPt/n--GaAs Schottky contacts
- Auteur
- MACHAC, P1 ; PERINA, V2
[1] Institute of Chemical Technology, Technická 5, 166 28 Prague, Czech Republic
[2] Nuclear Physics Institute of Academy Sciences, 250 68 Rez near Prague, Czech Republic - Source
Journal of materials science. Materials in electronics. 2002, Vol 13, Num 5, pp 273-275 ; ref : 7 ref
- ISSN
- 0957-4522
- Domaine scientifique
- Electronics; Condensed state physics
- Editeur
- Springer, Norwell, MA
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Alliage binaire Barrière Schottky Caractéristique courant tension Composé binaire Contact ohmique Gallium arséniure Hauteur barrière Idéalité Or alliage Platine alliage Recuit thermique rapide Stabilité thermique Alliage AuPt As Ga Au Pt GaAs
- Mot clé (en)
- Binary alloy Schottky barrier Voltage current curve Binary compound Ohmic contact Gallium arsenides Barrier height Ideality Gold alloy Platinum alloy Rapid thermal annealing Thermal stability
- Mot clé (es)
- Aleación binaria Barrera Schottky Característica corriente tensión Compuesto binario Contacto óhmico Altura barrera Idealidad Oro aleación Platino aleación Recocido térmico rápido Estabilidad térmica
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F01 Interfaces
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 13724784
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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