High carrier mobility in single-crystal plasma-deposited diamond
- Auteur
- ISBERG, Jan1 ; HAMMERSBERG, Johan1 ; JOHANSSON, Erik1 ; WIKSTRÖM, Tobias1 ; TWITCHEN, Daniel J2 ; WHITEHEAD, Andrew J2 ; COE, Steven E2 ; SCARSBROOK, Geoffrey A2
[1] ABB Group Services Center, Corporate Research, Nanotechnology and Innovative Materials Group, Västerås, Sweden
[2] De Beers Industrial Diamonds, King's Ride Park, Ascot, United Kingdom - Source
Science (Washington, D.C.). 2002, Vol 297, Num 5587, pp 1670-1672
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Domaine scientifique
- Multidisciplinary
- Editeur
- American Association for the Advancement of Science, Washington, DC
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Caractéristique courant tension Diamant Mobilité dérive Mobilité porteur charge Monocristal Méthode temps vol Température ambiante 7220F 7340L C
- Mot clé (en)
- IV characteristic Diamonds Drift mobility Carrier mobility Monocrystals Time-of-flight method Ambient temperature
- Mot clé (es)
- Movilidad deriva
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70B Transport électronique / 001B70B20 Phénomènes de conductivité dans les semiconducteurs et les isolants / 001B70B20F Transport en champ faible et mobilité; piézorésistance
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70C Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité / 001B70C40 Transport électronique dans des structures à interface / 001B70C40L Contacts semiconducteur-semiconducteur, jonctions p-n et hétérojonctions d'autres semiconducteurs
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 13913197
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Accès au Document
Installer sur votre navigateur
DOI
10.1126/science.1074374 
https://dx.doi.org/10.1126/science.1074374
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1126\/science.1074374\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"297\";s:8:\"\u0000*\u0000issue\";s:4:\"5587\";s:8:\"\u0000*\u0000spage\";s:4:\"1670\";s:8:\"\u0000*\u0000epage\";s:4:\"1672\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"ISBERG\";s:10:\"\u0000*\u0000aufirst\";s:3:\"Jan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"HAMMERSBERG, Johan\";i:1;s:15:\"JOHANSSON, Erik\";i:2;s:17:\"WIKSTR\u00d6M, Tobias\";i:3;s:18:\"TWITCHEN, Daniel J\";i:4;s:19:\"WHITEHEAD, Andrew J\";i:5;s:13:\"COE, Steven E\";i:6;s:22:\"SCARSBROOK, Geoffrey A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1126\/science.1074374\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"297\";s:8:\"\u0000*\u0000issue\";s:4:\"5587\";s:8:\"\u0000*\u0000spage\";s:4:\"1670\";s:8:\"\u0000*\u0000epage\";s:4:\"1672\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"ISBERG\";s:10:\"\u0000*\u0000aufirst\";s:3:\"Jan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"HAMMERSBERG, Johan\";i:1;s:15:\"JOHANSSON, Erik\";i:2;s:17:\"WIKSTR\u00d6M, Tobias\";i:3;s:18:\"TWITCHEN, Daniel J\";i:4;s:19:\"WHITEHEAD, Andrew J\";i:5;s:13:\"COE, Steven E\";i:6;s:22:\"SCARSBROOK, Geoffrey A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:23:\"10.1126\/science.1074374\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Accès par Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1126\/science.1074374\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"297\";s:8:\"\u0000*\u0000issue\";s:4:\"5587\";s:8:\"\u0000*\u0000spage\";s:4:\"1670\";s:8:\"\u0000*\u0000epage\";s:4:\"1672\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"ISBERG\";s:10:\"\u0000*\u0000aufirst\";s:3:\"Jan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"HAMMERSBERG, Johan\";i:1;s:15:\"JOHANSSON, Erik\";i:2;s:17:\"WIKSTR\u00d6M, Tobias\";i:3;s:18:\"TWITCHEN, Daniel J\";i:4;s:19:\"WHITEHEAD, Andrew J\";i:5;s:13:\"COE, Steven E\";i:6;s:22:\"SCARSBROOK, Geoffrey A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1126\/science.1074374\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"297\";s:8:\"\u0000*\u0000issue\";s:4:\"5587\";s:8:\"\u0000*\u0000spage\";s:4:\"1670\";s:8:\"\u0000*\u0000epage\";s:4:\"1672\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"ISBERG\";s:10:\"\u0000*\u0000aufirst\";s:3:\"Jan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"HAMMERSBERG, Johan\";i:1;s:15:\"JOHANSSON, Erik\";i:2;s:17:\"WIKSTR\u00d6M, Tobias\";i:3;s:18:\"TWITCHEN, Daniel J\";i:4;s:19:\"WHITEHEAD, Andrew J\";i:5;s:13:\"COE, Steven E\";i:6;s:22:\"SCARSBROOK, Geoffrey A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1126\/science.1074374\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Science (Washington, D.C.)\";s:9:\"\u0000*\u0000stitle\";s:20:\"Science (Wash. D.C.)\";s:7:\"\u0000*\u0000date\";s:4:\"2002\";s:9:\"\u0000*\u0000volume\";s:3:\"297\";s:8:\"\u0000*\u0000issue\";s:4:\"5587\";s:8:\"\u0000*\u0000spage\";s:4:\"1670\";s:8:\"\u0000*\u0000epage\";s:4:\"1672\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0036-8075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"ISBERG\";s:10:\"\u0000*\u0000aufirst\";s:3:\"Jan\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"HAMMERSBERG, Johan\";i:1;s:15:\"JOHANSSON, Erik\";i:2;s:17:\"WIKSTR\u00d6M, Tobias\";i:3;s:18:\"TWITCHEN, Daniel J\";i:4;s:19:\"WHITEHEAD, Andrew J\";i:5;s:13:\"COE, Steven E\";i:6;s:22:\"SCARSBROOK, Geoffrey A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SCIEAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:64:\"High carrier mobility in single-crystal plasma-deposited diamond\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:51:\"American Association for the Advancement of Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par arXiv
