Atomic structure, band offsets, growth and defects at high-K oxide :Si interfaces
- Auteur
- ROBERTSON, J1 ; PEACOCK, P. W1
[1] Department of Engineering, Cambridge University, Cambridge CB2 1PZ, United Kingdom - Titre de la conférence
- INFOS 2003 Proceedings of the 13th Biennial Conference on Insulating Films on Semiconductors: June 18-20, 2003, Barcelona, Spain
- Nom de la conférence
- Biannual Conference on Insulating Films on Semiconductors (13 ; Barcelona 2003-06-18)
- Auteur (monographie)
- MORANTE LLEONART, Joan-RamÓn (Editor)1
University of Barcelona, Spain (Funder/Sponsor)
[1] Department of Electronics, Universitat de Barcelona, C/Marti i Franques 1, 2nd floor, Barcelona 02028, Spain - Source
Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 112-120, 9 p ; ref : 52 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Domaine scientifique
- Electronics
- Editeur
- Elsevier Science, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Conference Paper
- Langue
- English
- Mot clé (fr)
- Constante diélectrique Contact isolant semiconducteur Discontinuité bande Diélectrique Défaut ponctuel Grille transistor Niveau défaut Oxyde grille Structure bande Transistor MOS complémentaire
- Mot clé (en)
- Permittivity Semiconductor insulator contact Band offset Dielectric materials Point defect Transistor gate Defect level Gate oxide Band structure Complementary MOS transistor
- Mot clé (es)
- Constante dieléctrica Contacto aislante semiconductor Discontinuidad banda Dieléctrico Defecto puntual Rejilla transistor Oxido rejilla Estructura banda Transistor MOS complementario
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F01 Interfaces
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 15646158
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2003.12.026 
https://dx.doi.org/10.1016/j.mee.2003.12.026
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