Electrical evaluation of defects at the Si(100)/HfO2 interface
- Auteur
- O'SULLIVAN, B. J1 ; HURLEY, P. K1 ; O'CONNOR, E1 ; MODREANU, M1 ; ROUSSEL, H2 ; JIMENEZ, C2 ; DUBOURDIEU, B. C2 ; AUDIER, B. M2 ; SENATEUR, J. P2
[1] The National Microelectronics Research Centre, University Collège, Cork, Ireland
[2] Laboratoire des Matériaux et du Génie Physique, UMR CNRS 5628, INPG, ENSPG, 38402, St. Martin d'Hères, France - Source
Journal of the Electrochemical Society. 2004, Vol 151, Num 8, pp G493-G496 ; ref : 19 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Domaine scientifique
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Editeur
- Electrochemical Society, Pennington, NJ
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Activité électrique Couche mince diélectrique Couche mince semiconductrice Etat électronique interface Etude expérimentale Face cristalline Hafnium oxyde Interface solide solide Silicium Structure électronique Métal transition Composé
- Mot clé (en)
- Electrical activity Dielectric thin films Semiconductor thin films Interface electron state Experimental study Crystal faces Hafnium oxides Solid-solid interfaces Silicon Electronic structure Transition elements Compounds
- Mot clé (es)
- Actividad eléctrica Estado electrónico interfase Compuesto
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70A Etats électroniques / 001B70A20 Densités d'états électroniques et structure de bandes des solides cristallins / 001B70A20D Métaux alcalins et alcalino-terreux
- Pacs
- 7120D
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 16002216
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.1765678 
https://dx.doi.org/10.1149/1.1765678
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