Origin of the 'S-shaped' temperature dependence of luminescent peaks from semiconductors
- Auteur
- LI, Q1 ; XU, S. J1 ; XIE, M. H1 ; TONG, S. Y1
[1] Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong-Kong - Source
Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 30, pp 4853-4858, 6 p ; ref : 21 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Domaine scientifique
- Crystallography; Metallurgy, welding; Condensed state physics
- Editeur
- Institute of Physics, Bristol
- Pays de publication
- United Kingdom
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Bande interdite Effet température Etat localisé Forme en S Luminescence Relation empirique Semiconducteur 7860
- Mot clé (en)
- Energy gap Temperature effects Localized states S shape Luminescence Empirical relation Semiconductor materials
- Mot clé (es)
- Forma de una S Relación empírica
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70H Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement / 001B70H60 Autres spectres de luminescence et recombinaison radiative
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 16994232
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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