Shortened photoconductance lifetime of Si/SiGe heterostructures due to interfacial oxygen or carbon from incomplete in-situ hydrogen cleans
- Author
- CARROLL, M. S1 ; KING, C. A1
[1] Agere Systems, Allentown, PA 18109, United States - Source
Thin solid films. 2005, Vol 473, Num 1, pp 137-144, 8 p ; ref : 30 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Author keyword
- Computer simulation Epitaxy Photoconductivity SiGe
- Keyword (fr)
- Alliage Ge Si Carbone Composé minéral Couche Durée vie Dépôt chimique phase vapeur Epitaxie Gradin Hydrogène Hétérostructure In situ Interface Oxygène Photoconductivité Semiconducteur Silicium Substrat Ge Si Si SiGe
- Keyword (en)
- Ge-Si alloys Carbon Inorganic compounds Layers Lifetime CVD Epitaxy Step Hydrogen Heterostructures In situ Interfaces Oxygen Photoconductivity Semiconductor materials Silicon Substrates
- Keyword (es)
- Peldaño In situ
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17139798
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2004.07.082 
https://dx.doi.org/10.1016/j.tsf.2004.07.082
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