Shortened photoconductance lifetime of Si/SiGe heterostructures due to interfacial oxygen or carbon from incomplete in-situ hydrogen cleans
- Auteur
- CARROLL, M. S1 ; KING, C. A1
[1] Agere Systems, Allentown, PA 18109, United States - Source
Thin solid films. 2005, Vol 473, Num 1, pp 137-144, 8 p ; ref : 30 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Domaine scientifique
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editeur
- Elsevier Science, Lausanne
- Pays de publication
- Switzerland
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Computer simulation Epitaxy Photoconductivity SiGe
- Mot clé (fr)
- Alliage Ge Si Carbone Composé minéral Couche Durée vie Dépôt chimique phase vapeur Epitaxie Gradin Hydrogène Hétérostructure In situ Interface Oxygène Photoconductivité Semiconducteur Silicium Substrat Ge Si Si SiGe
- Mot clé (en)
- Ge-Si alloys Carbon Inorganic compounds Layers Lifetime CVD Epitaxy Step Hydrogen Heterostructures In situ Interfaces Oxygen Photoconductivity Semiconductor materials Silicon Substrates
- Mot clé (es)
- Peldaño In situ
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques)
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70C Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 17139798
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2004.07.082 
https://dx.doi.org/10.1016/j.tsf.2004.07.082
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