Studies of thermal stability of charges associated with thermal transfer of OSL from quartz
- Auteur
- BO LI1 ; LI, Sheng-Hua1
[1] Department of Earth Sciences, The University of Hong Kong, Pokfulam Road, Hong-Kong - Source
Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 14, pp 2941-2949, 9 p ; ref : 30 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Domaine scientifique
- Condensed state physics; Physics; Plasma physics
- Editeur
- Institute of Physics, Bristol
- Pays de publication
- United Kingdom
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Composé naturel Durée vie Emission stimulée Etat défaut Luminescence Niveau profond Piégeage porteur charge Quartz Recuit isotherme Stabilité thermique Transfert charge 7860
- Mot clé (en)
- Natural compound Lifetime Stimulated emission Defect states Luminescence Deep level Charge carrier trapping Quartz Isothermal annealing Thermal stability Charge transfer
- Mot clé (es)
- Compuesto natural Nivel profundo Captura portador carga Recocido isotérmico Transferencia carga
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70H Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement / 001B70H60 Autres spectres de luminescence et recombinaison radiative
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 17947769
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0022-3727/39/14/011 
https://dx.doi.org/10.1088/0022-3727/39/14/011
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