Improvement in high-k (HfO2/SiO2) reliability by incorporation of fluorine
- Auteur
- SEO, Kang-Ill1 ; SREENIVASAN, Raghavasimhan1 ; MCINTYRE, Paul C1 ; SARASWAT, Krishna C2
[1] Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States
[2] Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States - Source
IEEE electron device letters. 2006, Vol 27, Num 10, pp 821-823, 3 p ; ref : 10 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Domaine scientifique
- Electronics
- Editeur
- Institute of Electrical and Electronics Engineers, New York, NY
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Fluorine HfO2/SiO2 high-k interface states negative bias temperature instability (NBTI) positive charges
- Mot clé (fr)
- Contact isolant semiconducteur Contrainte thermique Contrainte électrique Diélectrique permittivité élevée Endommagement Etat interface Fiabilité Grille transistor Multicouche Piégeage porteur charge Profil profondeur Rayonnement UV Recuit
- Mot clé (en)
- Semiconductor insulator contact Thermal stress Electric stress High k dielectric Damaging Interface state Reliability Transistor gate Multiple layer Charge carrier trapping Depth profile Ultraviolet radiation Annealing
- Mot clé (es)
- Contacto aislante semiconductor Tensión térmica Tensión eléctrica Dieléctrico alta constante dieléctrica Deterioración Estado interfase Fiabilidad Rejilla transistor Capa múltiple Captura portador carga Perfil profundidad Radiación ultravioleta Recocido
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F01 Interfaces
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 18150091
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2006.882564 
https://dx.doi.org/10.1109/LED.2006.882564
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