Diamond deposition on copper : studies on nucleation, growth, and adhesion behaviours
- Author
- FAN, Q. H1 ; PEREIRA, E1 ; GRACIO, J2
[1] Department of Physics, University of Aveiro, 3810 Aveiro, Portugal
[2] Department of Mechanical Engineering, University of Aveiro, 3810 Aveiro, Portugal - Source
Journal of materials science. 1999, Vol 34, Num 6, pp 1353-1365 ; ref : 22 ref
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adhérence Croissance cristalline en phase vapeur Diamant Etude expérimentale Germination cristalline Méthode PECVD Prétraitement Substrat Traitement surface C Non métal
- Keyword (en)
- Adhesion Crystal growth from vapors Diamonds Experimental study Crystal nucleation PECVD Pretreatment Substrates Surface treatments Nonmetals
- Keyword (es)
- Germinación cristalina Pretratamiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic / 001B60H60B Mechanical and acoustical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1889516
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1023/A:1004566502572 
https://dx.doi.org/10.1023/A:1004566502572
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