Atomic scale simulations of donor-vacancy pairs in germanium
- Author
- CHRONEOS, A1 ; GRIMES, R. W1 ; TSAMIS, C2
[1] Department of Materials, Imperial College, London SW7 2BP, United Kingdom
[2] Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece - Conference title
- Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)
- Conference name
- Coordination Action on Defects Relevant to Engineering Silicon-Based Devices. International Workshop (2 ; Kalives, Crete 2006-09-08)
- Author (monograph)
- EVANS-FREEMAN, Jan (Editor)1
European Commission, CADRES Project, Europe (Organiser of meeting)
[1] Sheffield Hallam University, Sheffield, United Kingdom - Source
Journal of materials science. Materials in electronics. 2007, Vol 18, Num 7, pp 763-768, 6 p ; ref : 36 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Antimoine Arsenic Energie liaison Germanium Lacune Méthode fonctionnelle densité Onde plane Semiconducteur type n Silicium As Ge Sb Si
- Keyword (en)
- Antimony Arsenic Binding energy Germanium Vacancy Density functional method Plane wave n type semiconductor Silicon
- Keyword (es)
- Antimonio Arsénico Energía enlace Germanio Cavidad Onda plana Semiconductor tipo n Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18965028
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-006-9073-8 
https://dx.doi.org/10.1007/s10854-006-9073-8
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