Atomic scale simulations of donor-vacancy pairs in germanium
- Auteur
- CHRONEOS, A1 ; GRIMES, R. W1 ; TSAMIS, C2
[1] Department of Materials, Imperial College, London SW7 2BP, United Kingdom
[2] Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece - Titre de la conférence
- Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)
- Nom de la conférence
- Coordination Action on Defects Relevant to Engineering Silicon-Based Devices. International Workshop (2 ; Kalives, Crete 2006-09-08)
- Auteur (monographie)
- EVANS-FREEMAN, Jan (Editor)1
European Commission, CADRES Project, Europe (Organiser of meeting)
[1] Sheffield Hallam University, Sheffield, United Kingdom - Source
Journal of materials science. Materials in electronics. 2007, Vol 18, Num 7, pp 763-768, 6 p ; ref : 36 ref
- ISSN
- 0957-4522
- Domaine scientifique
- Electronics; Condensed state physics
- Editeur
- Springer, Norwell, MA
- Pays de publication
- United States
- Type de document
- Conference Paper
- Langue
- English
- Mot clé (fr)
- Antimoine Arsenic Energie liaison Germanium Lacune Méthode fonctionnelle densité Onde plane Semiconducteur type n Silicium As Ge Sb Si
- Mot clé (en)
- Antimony Arsenic Binding energy Germanium Vacancy Density functional method Plane wave n type semiconductor Silicon
- Mot clé (es)
- Antimonio Arsénico Energía enlace Germanio Cavidad Onda plana Semiconductor tipo n Silicio
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03C Matériaux
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 18965028
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-006-9073-8 
https://dx.doi.org/10.1007/s10854-006-9073-8
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9073-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"763\";s:8:\"\u0000*\u0000epage\";s:3:\"768\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CHRONEOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"GRIMES, R. W\";i:1;s:9:\"TSAMIS, C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9073-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"763\";s:8:\"\u0000*\u0000epage\";s:3:\"768\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CHRONEOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"GRIMES, R. W\";i:1;s:9:\"TSAMIS, C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9073-8\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
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"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9073-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"763\";s:8:\"\u0000*\u0000epage\";s:3:\"768\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CHRONEOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"GRIMES, R. W\";i:1;s:9:\"TSAMIS, C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9073-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"763\";s:8:\"\u0000*\u0000epage\";s:3:\"768\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CHRONEOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"GRIMES, R. W\";i:1;s:9:\"TSAMIS, C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9073-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"763\";s:8:\"\u0000*\u0000epage\";s:3:\"768\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CHRONEOS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"GRIMES, R. W\";i:1;s:9:\"TSAMIS, C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:60:\"Atomic scale simulations of donor-vacancy pairs in germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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