Oxygen defects in irradiated germanium
- Author
- CARVALHO, A1 ; JONES, R1 ; TORRES, V. J. B2 ; COUTINHO, J2 ; MARKEVICH, V3 ; OBERG, S4 ; BRIDDON, P. R5
[1] School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
[2] Department of Physics, University of Aveiro, 3810 Aveiro, Portugal
[3] University of Manchester, Manchester M60 1 QD, United Kingdom
[4] Department of Mathematics, LuleÅ University of Technology, LuleÅ 97187, Sweden
[5] School of Natural Sciences, University of Newcastle upon Tyne, NE1 7RU, Newcastle upon Tyne, United Kingdom - Conference title
- Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)
- Conference name
- Coordination Action on Defects Relevant to Engineering Silicon-Based Devices. International Workshop (2 ; Kalives, Crete 2006-09-08)
- Author (monograph)
- EVANS-FREEMAN, Jan (Editor)1
European Commission, CADRES Project, Europe (Organiser of meeting)
[1] Sheffield Hallam University, Sheffield, United Kingdom - Source
Journal of materials science. Materials in electronics. 2007, Vol 18, Num 7, pp 781-786, 6 p ; ref : 34 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Barrière énergie Effet Hall Energie activation Germanium Modélisation Oxygène Recuit Spectrométrie IR Spectrométrie transitoire niveau profond Ge O
- Keyword (en)
- Energy barrier Hall effect Activation energy Germanium Modeling Oxygen Annealing Infrared spectrometry Deep level transient spectrometry
- Keyword (es)
- Barrera energía Efecto Hall Energía activación Germanio Modelización Oxígeno Recocido Espectrometría IR Espectrometría transitoria nivel profundo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18965031
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1007/s10854-006-9083-6 
https://dx.doi.org/10.1007/s10854-006-9083-6
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9083-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:38:\"Oxygen defects in irradiated germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"781\";s:8:\"\u0000*\u0000epage\";s:3:\"786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CARVALHO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"JONES, R\";i:1;s:15:\"TORRES, V. J. B\";i:2;s:11:\"COUTINHO, J\";i:3;s:12:\"MARKEVICH, V\";i:4;s:8:\"OBERG, S\";i:5;s:13:\"BRIDDON, P. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:38:\"Oxygen defects in irradiated germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9083-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:38:\"Oxygen defects in irradiated germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"781\";s:8:\"\u0000*\u0000epage\";s:3:\"786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CARVALHO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"JONES, R\";i:1;s:15:\"TORRES, V. J. B\";i:2;s:11:\"COUTINHO, J\";i:3;s:12:\"MARKEVICH, V\";i:4;s:8:\"OBERG, S\";i:5;s:13:\"BRIDDON, P. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:38:\"Oxygen defects in irradiated germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9083-6\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9083-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:38:\"Oxygen defects in irradiated germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"781\";s:8:\"\u0000*\u0000epage\";s:3:\"786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CARVALHO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"JONES, R\";i:1;s:15:\"TORRES, V. J. B\";i:2;s:11:\"COUTINHO, J\";i:3;s:12:\"MARKEVICH, V\";i:4;s:8:\"OBERG, S\";i:5;s:13:\"BRIDDON, P. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:38:\"Oxygen defects in irradiated germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9083-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:38:\"Oxygen defects in irradiated germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"781\";s:8:\"\u0000*\u0000epage\";s:3:\"786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CARVALHO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"JONES, R\";i:1;s:15:\"TORRES, V. J. B\";i:2;s:11:\"COUTINHO, J\";i:3;s:12:\"MARKEVICH, V\";i:4;s:8:\"OBERG, S\";i:5;s:13:\"BRIDDON, P. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:38:\"Oxygen defects in irradiated germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-006-9083-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:38:\"Oxygen defects in irradiated germanium\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"18\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:3:\"781\";s:8:\"\u0000*\u0000epage\";s:3:\"786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"CARVALHO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"JONES, R\";i:1;s:15:\"TORRES, V. J. B\";i:2;s:11:\"COUTINHO, J\";i:3;s:12:\"MARKEVICH, V\";i:4;s:8:\"OBERG, S\";i:5;s:13:\"BRIDDON, P. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:155:\"Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)\";s:8:\"\u0000*\u0000title\";s:38:\"Oxygen defects in irradiated germanium\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
