Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment
- Auteur
- MALAG, A; CZARNECKI, K; FRONC, K
Inst. electron technology, Warsaw 02-668, Poland - Source
IEE proceedings. Part J. Optoelectronics. 1991, Vol 138, Num 1, pp 13-20, 8 p ; ref : 29 ref
- CODEN
- IPJOEE
- ISSN
- 0267-3932
- Domaine scientifique
- Electronics; Computer science; Optics
- Editeur
- Institution of Electrical Engineers, Stevenage
- Pays de publication
- United Kingdom
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Aluminium Gallium Arséniure Mixte Caractérisation Champ lointain Diagramme rayonnement Etude expérimentale Laser injection Laser semiconducteur Onde entretenue Régime impulsionnel
- Mot clé (en)
- Aluminium Gallium Arsenides Mixed Characterization Far field Radiation pattern Experimental study Injection laser Semiconductor laser Continuous wave Pulse behavior
- Mot clé (es)
- Aluminio Caracterización Campo lejano Diagrama radiación Estudio experimental Laser inyección Laser semiconductor Onda continua Régimen impulsional
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B40 Domaines classiques de la physique (y compris les applications) / 001B40B Optique / 001B40B55 Lasers / 001B40B55P Lasers à semiconducteur; diodes laser
- Discipline
- Physics : optics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 19503096
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Accès au Document
Installer sur votre navigateur
DOI
10.1049/ip-j.1991.0003 
https://dx.doi.org/10.1049/ip-j.1991.0003
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1049\/ip-j.1991.0003\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:9:\"\u0000*\u0000jtitle\";s:40:\"IEE proceedings. Part J. Optoelectronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEE proc. J Optoelectron\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:3:\"138\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"13\";s:8:\"\u0000*\u0000epage\";s:2:\"20\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-3932\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"MALAG\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"CZARNECKI, K\";i:1;s:8:\"FRONC, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IPJOEE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:8:\"\u0000*\u0000place\";s:9:\"Stevenage\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1049\/ip-j.1991.0003\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:9:\"\u0000*\u0000jtitle\";s:40:\"IEE proceedings. Part J. Optoelectronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEE proc. J Optoelectron\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:3:\"138\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"13\";s:8:\"\u0000*\u0000epage\";s:2:\"20\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-3932\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"MALAG\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"CZARNECKI, K\";i:1;s:8:\"FRONC, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IPJOEE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:8:\"\u0000*\u0000place\";s:9:\"Stevenage\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:22:\"10.1049\/ip-j.1991.0003\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Accès par Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1049\/ip-j.1991.0003\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:9:\"\u0000*\u0000jtitle\";s:40:\"IEE proceedings. Part J. Optoelectronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEE proc. J Optoelectron\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:3:\"138\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"13\";s:8:\"\u0000*\u0000epage\";s:2:\"20\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-3932\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"MALAG\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"CZARNECKI, K\";i:1;s:8:\"FRONC, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IPJOEE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:8:\"\u0000*\u0000place\";s:9:\"Stevenage\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1049\/ip-j.1991.0003\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:9:\"\u0000*\u0000jtitle\";s:40:\"IEE proceedings. Part J. Optoelectronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEE proc. J Optoelectron\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:3:\"138\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"13\";s:8:\"\u0000*\u0000epage\";s:2:\"20\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-3932\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"MALAG\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"CZARNECKI, K\";i:1;s:8:\"FRONC, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IPJOEE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:8:\"\u0000*\u0000place\";s:9:\"Stevenage\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1049\/ip-j.1991.0003\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:9:\"\u0000*\u0000jtitle\";s:40:\"IEE proceedings. Part J. Optoelectronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEE proc. J Optoelectron\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:3:\"138\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"13\";s:8:\"\u0000*\u0000epage\";s:2:\"20\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-3932\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"MALAG\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"CZARNECKI, K\";i:1;s:8:\"FRONC, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IPJOEE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Thermal index guiding in (AlGa)As proton-isolated lasers : its origins and reduction by post-implantation heat treatment\";s:8:\"\u0000*\u0000place\";s:9:\"Stevenage\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par arXiv
