Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface
- Auteur
- LI GENG1 ; MAGYARI-KOPE, Blanka2 ; ZHIYONG ZHANG3 ; NISHI, Yoshio1
[1] Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China
[2] Department of Electrical Engineering, Stanford University, Stanford, CO 94305-4070, United States
[3] Department of Chemical Engineering, Stanford University, Stanford, CO 94305-4070, United States - Source
IEEE electron device letters. 2008, Vol 29, Num 7, pp 746-749, 4 p ; ref : 19 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Domaine scientifique
- Electronics
- Editeur
- Institute of Electrical and Electronics Engineers, New York, NY
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Nickel silicide (NiSi2) Schottky barrier (SB) modulation segregation yttrium (Y)
- Mot clé (fr)
- Addition yttrium Barrière Schottky Calcul ab initio Densité état Hauteur barrière Liaison disponible Modélisation Silicium Siliciure de nickel Structure interface NiSi2 Si
- Mot clé (en)
- Yttrium addition Schottky barrier Ab initio calculations Density of states Barrier height Dangling bond Modeling Silicon Nickel silicide Interface structure
- Mot clé (es)
- Adición ytrio Barrera Schottky Densidad estado Altura barrera Enlace disponible Modelización Silicio Níquel siliciuro Estructura interfaz
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F01 Interfaces
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 20474672
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2008.2000647 
https://dx.doi.org/10.1109/LED.2008.2000647
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