Effect of Mo-W Co-doping on semiconductor-metal phase transition temperature of vanadium dioxide film
- Auteur
- YAN JIAZHEN1 ; ZHANG YUE1 ; HUANG WANXIA1 ; TU MINGJIN1
[1] College of Material Science and Engineering, Sichuan University, Chengdu, Sichuan 610064, China - Source
Thin solid films. 2008, Vol 516, Num 23, pp 8554-8558, 5 p ; ref : 20 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Domaine scientifique
- Crystallography; Metallurgy, welding; Condensed state physics
- Editeur
- Elsevier, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Molybdenum-tungsten codoping Muscovite substrate Phase transition temperature Vanadium oxide
- Mot clé (fr)
- Addition cobalt Addition molybdène Addition tungstène Codopage Couche mince Diffraction RX Dopage Energie surface Facteur transmission Grosseur grain Hystérésis Microscopie force atomique Microstructure Molybdène Morphologie Oxyde de vanadium Plan expérience Procédé sol gel Spectre absorption Spectre photoélectron RX Température ambiante Température transition Transition métal semiconducteur Transition phase Tungstène Vanadium 6855J 8115L Mo VO2 W
- Mot clé (en)
- Cobalt additions Molybdenum additions Tungsten additions Codoping Thin films XRD Doping Surface energy Transmittance Grain size Hysteresis Atomic force microscopy Microstructure Molybdenum Morphology Vanadium oxide Experimental design Sol-gel process Absorption spectra X-ray photoelectron spectra Ambient temperature Transition temperature Semiconductor metal transition Phase transitions Tungsten Vanadium
- Mot clé (es)
- Codrogado Doping Factor transmisión Vanadio óxido Transición metal semiconductor Transición fase
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) / 001B60H55 Structure et morphologie de couches minces / 001B60H55J Structure et morphologie; épaisseur
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15L Epitaxie en phase liquide; dépôt en phase liquide (phases fondues, solutions et couches superficielles sur des liquides)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 20818957
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2008.05.021 
https://dx.doi.org/10.1016/j.tsf.2008.05.021
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