First principles study of substoichiometric germanium oxides
- Auteur
- FELIX BINDER, Jan; BROQVIST, Peter; PASQUARELLO, Alfredo
[1] Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
[2] Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), 1015 Lausanne, Switzerland - Titre de la conférence
- Proceedings of the 16th International Conference Insulating Films on Semiconductors
- Nom de la conférence
- Insulating Films on Semiconductors. International Conference (16 ; Cambridge 2009-06-28)
- Auteur (monographie)
- ROBERTSON, J (Editor)1 ; HALL, S (Editor)1
[1] Cambridge University and Liverpool University, United Kingdom - Source
Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1760-1762, 3 p ; ref : 13 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Domaine scientifique
- Electronics
- Editeur
- Elsevier, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Conference Paper
- Langue
- English
- Mot clé auteur
- Bond energy Substoichiometric oxides
- Mot clé (fr)
- Bande interdite Contact isolant semiconducteur Oxydation
- Mot clé (en)
- Energy gap Semiconductor insulator contact Oxidation
- Mot clé (es)
- Banda prohibida Contacto aislante semiconductor Oxidación
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F01 Interfaces
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 21815332
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2009.03.101 
https://dx.doi.org/10.1016/j.mee.2009.03.101
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