van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
- Auteur
- YUMENG SHI1 2 ; WU ZHOU4 5 ; IDROBO, Juan-Carlos5 ; JING KONG1 ; LU, Ang-Yu3 ; WENJING FANG1 ; LEE, Yi-Hsien1 3 ; ALLEN LONG HSU1 ; SOO MIN KIM1 ; KI KANG KIM1 ; HUI YING YANG2 ; LI, Lain-Jong3
[1] Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
[2] Singapore University of Technology and Design, 20 Dover Drive Singapore 138682, Singapore
[3] Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 11529, Taiwan, Province of China
[4] Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
[5] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge Tennessee 37831-6064, United States - Source
Nano letters (Print). 2012, Vol 12, Num 6, pp 2784-2791, 8 p ; ref : 32 ref
- Editeur
- American Chemical Society, Washington, DC
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Catalyseur Couche mince Cuivre Décomposition thermique Dépôt chimique phase vapeur Epitaxie Fonctionnalisation Graphène Hétérostructure Monocristal Mécanisme croissance Précurseur Recuit Réaction dirigée Réseau hexagonal Sulfure de molybdène 6146 8105U 8115G 8116B MoS2 Substrat graphène
- Mot clé (en)
- Catalysts Thin films Copper Thermal decomposition CVD Epitaxy Functionalization Graphene Heterostructures Monocrystals Growth mechanism Precursor Annealing Template reaction Hexagonal lattices Molybdenum sulfide
- Mot clé (es)
- Descomposición térmica Funciónalización Graphene Mecanismo crecimiento Reacción dirigida Molibdeno sulfuro
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60A Structure des liquides et des solides; cristallographie / 001B60A46 Nanomatériaux : agrégats, nanoparticules, nanotubes et nanocristaux
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A05 Matériaux particuliers / 001B80A05T Fullerènes et matériaux apparentés; diamants, graphite
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15G Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.)
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A16 Méthodes de nanofabrication / 001B80A16B Méthodes de synthèse chimique
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 25989650
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl204562j 
https://dx.doi.org/10.1021/nl204562j
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