Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni―C60― Ni Single Molecule Transistors
- Auteur
- YOSHIDA, Kenji1 ; HAMADA, Ikutaro2 3 ; SAKATA, Shuichi1 ; UMENO, Akinori1 ; TSUKADA, Masaru2 3 ; HIRAKAWA, Kazuhiko1 3
[1] Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
[2] Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
[3] CREST-Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan - Source
Nano letters (Print). 2013, Vol 13, Num 2, pp 481-485, 5 p ; ref : 45 ref
- Editeur
- American Chemical Society, Washington, DC
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Densité état Dispositif 1molécule Electrode commande Etude théorique Ferromagnétique Fullerènes Hybridation Magnétorésistance négative Méthode fonctionnelle densité Nickel Niveau Fermi Orbitale moléculaire Polarité Structure électronique Tellurure de gallium 7115M 7322 7550T 8105T C60
- Mot clé (en)
- Density of states Single molecule device Gates Theoretical study Ferromagnetic materials Fullerenes Hybridization Negative magnetoresistance Density functional method Nickel Fermi level Molecular orbital Polarity Electronic structure Gallium tellurides
- Mot clé (es)
- Densidad estado Dispositivo 1 molécula Material ferromagnético Magnetoresistencia negativa Orbital molecular Polaridad
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70A Etats électroniques / 001B70A15 Méthodes de calcul de structure électronique
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70C Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité / 001B70C22 Structure électronique des nanomatériaux : agrégats, nanoparticules, nanotubes et nanocristaux
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70E Propriétés et matériaux magnétiques / 001B70E50 Etudes de matériaux magnétiques particuliers / 001B70E50T Particules fines, nanomatériaux
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A05 Matériaux particuliers / 001B80A05T Fullerènes et matériaux apparentés; diamants, graphite
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 27145374
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl303871x 
https://dx.doi.org/10.1021/nl303871x
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