Resolution Limits of Electron-Beam Lithography toward the Atomic Scale
- Auteur
- MANFRINATO, Vitor R1 ; LIHUA ZHANG2 ; DONG SU2 ; HUIGAO DUAN3 ; HOBBS, Richard G1 ; STACH, Eric A2 ; BERGGREN, Karl K1
[1] Electrical Engineering and Computer Science Department, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
[2] Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
[3] Micro―Nano Technologies Research Center, Hunan University, Changsha 410082, China - Source
Nano letters (Print). 2013, Vol 13, Num 4, pp 1555-1558, 4 p ; ref : 34 ref
- Editeur
- American Chemical Society, Washington, DC
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Aberration Lithographie faisceau électron Microscopie électronique balayage transmission Perte énergie Resist électronique Resist Silsesquioxane polymère Spectrométrie perte énergie électron 8116N
- Mot clé (en)
- Aberrations Electron beam lithography Scanning transmission electron microscopy Energy losses Electron resists Resists Silsesquioxane polymer EEL spectroscopy
- Mot clé (es)
- Silsesquioxano polímero
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A16 Méthodes de nanofabrication / 001B80A16N Nanolithographie
- Discipline
- Physics and materials science
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 27275290
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl304715p 
https://dx.doi.org/10.1021/nl304715p
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