Laser directed lithography of asymmetric graphene ribbons on a polydimethylsiloxane trench structure
- Auteur
- HE TIAN1 2 ; YI YANG1 ; ZHANG, Cang-Hai1 ; YUEGANG ZHANG2 ; DAN XIE1 ; REN, Tian-Ling1 ; YI SHU1 ; HUI SUN1 ; ZHOU, Chang-Jian1 ; XUAN LIU1 ; TAO, Lu-Qi1 ; JIE GE1
[1] Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, China
[2] The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, United States - Source
PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 18, pp 6825-6830, 6 p ; ref : 38 ref
- Editeur
- Royal Society of Chemistry, Cambridge
- Pays de publication
- United Kingdom
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Graphène Laser Lithographie Siloxane(diméthyl) polymère
- Mot clé (en)
- Graphene Lasers Lithography Dimethylsiloxane polymer
- Mot clé (es)
- Graphene Siloxano(dimetil) polímero
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A05 Matériaux particuliers
- Discipline
- Physics and materials science
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 27308005
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1039/c3cp50538c 
https://dx.doi.org/10.1039/c3cp50538c
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