Defect structure of epitaxial CrxV1-x thin films on MgO(001)
- Auteur
- KASPAR, Tiffany C1 ; BOWDEN, Mark E2 ; CHONGMIN WANG2 ; SHUTTHANANDAN, V2 ; MANANDHAR, Sandeep2 ; VAN GINHOVEN, Renee M3 ; WIRTH, Brian D4 ; KURTZ, Richard J3
[1] Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, United States
[2] Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, United States
[3] Energy and Environment Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, United States
[4] Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996, United States - Source
Thin solid films. 2014, Vol 550, pp 1-9, 9 p ; ref : 48 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Domaine scientifique
- Crystallography; Metallurgy, welding; Condensed state physics
- Editeur
- Elsevier, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Alloys Channeling CrxV1-x Epitaxy Misfit dislocations Rutherford backscattering spectrometry Transmission electron microscopy X-ray diffraction
- Mot clé (fr)
- Accommodation réseau Couche mince Couche épitaxique Diffraction RX Dilatation thermique Dislocation interfaciale Distorsion Déformation résiduelle Epitaxie jet moléculaire Formation défaut Hétérostructure Interface Microscopie électronique transmission Mécanisme croissance Paramètre cristallin RBS Relaxation Réseau cubique Réseau dislocation Structure cristalline Structure défaut Ségrégation 6855A 6855J 8115A 8115H Substrat MgO
- Mot clé (en)
- Mismatch lattice Thin films Epitaxial layers XRD Thermal expansion Misfit dislocations Distortion Residual strain Molecular beam epitaxy Defect formation Heterostructures Interfaces Transmission electron microscopy Growth mechanism Lattice parameters RBS Relaxation Cubic lattices Dislocation arrays Crystal structure Defect structure Segregation
- Mot clé (es)
- Acomodación red Deformación residual Formación defecto Mecanismo crecimiento
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) / 001B60H55 Structure et morphologie de couches minces / 001B60H55J Structure et morphologie; épaisseur
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15A Théorie et modèles de la croissance de films
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15H Epitaxie par faisceaux chimiques, ioniques, atomiques et moléculaires
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 28251179
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2013.09.067 
https://dx.doi.org/10.1016/j.tsf.2013.09.067
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