3C-SiC nanocrystal growth on 10° miscut Si(001) surface
- Auteur
- DEOKAR, Geetanjali1 ; D'ANGELO, Marie1 ; DEMAILLE, Dominique1 ; CAVELLIN, Catherine Deville1 2
[1] INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris 75005, France
[2] Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil 94010, France - Source
Thin solid films. 2014, Vol 556, pp 195-199, 5 p ; ref : 28 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Domaine scientifique
- Crystallography; Metallurgy, welding; Condensed state physics
- Editeur
- Elsevier, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Beta-silicon-carbide Epitaxial growth High resolution transmission electron microscopy Nanocrystals Vicinal Silicon
- Mot clé (fr)
- Carbure de silicium Composé III-V Couche épitaxique Croissance film Dispositif optoélectronique Dépendance temps Epitaxie Germe cristallin Hétéroépitaxie Interface Microscopie électronique transmission Mécanisme croissance Nanocristal Nanomatériau Recuit Relaxation Semiconducteur III-V Silicium Surface vicinale Synthèse nanomatériau Traitement thermique 6855A 6855J 8107 8116 GaN Substrat SiC Substrat silicium
- Mot clé (en)
- Silicon carbide III-V compound Epitaxial layers Film growth Optoelectronic devices Time dependence Epitaxy Crystal seeds Heteroepitaxy Interfaces Transmission electron microscopy Growth mechanism Nanocrystal Nanostructured materials Annealing Relaxation III-V semiconductors Silicon Vicinal surface Nanomaterial synthesis Heat treatments
- Mot clé (es)
- Silicio carburo Compuesto III-V Heteroepitaxia Mecanismo crecimiento Nanocristal Síntesis nanomaterial
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) / 001B60H55 Structure et morphologie de couches minces / 001B60H55J Structure et morphologie; épaisseur
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A07 Nanomatériaux et nanostructures : fabrication et caractèrisation / 001B80A07Z Divers
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15A Théorie et modèles de la croissance de films
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A16 Méthodes de nanofabrication
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 28331832
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2014.01.070 
https://dx.doi.org/10.1016/j.tsf.2014.01.070
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