Influence of the barrier composition in GaN/InxAl1―xN quantum wells properties
- Auteur
- KRIOUCHE, N1 ; WATANABE, A1 ; ODA, O1 ; EGAWA, T1
[1] Research Center for Nano-Device and System, Nagoya Institute of Technology Cokiso-cho, Showa-ku, Nagoya 466-8555, Japan - Source
Journal of crystal growth. 2014, Vol 390, pp 51-55, 5 p ; ref : 30 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Domaine scientifique
- Crystallography; Geology; Metallurgy, welding
- Editeur
- Elsevier, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- A1. MOVPE A3 Quantum wells B2. Photoluminescence InAlN
- Mot clé (fr)
- Composé III-V Confinement Diffraction RX Déplacement raie Effet champ électrique Epaisseur couche Epitaxie phase vapeur Luminescence Microscopie force atomique Méthode MOVPE Nanomatériau Photoluminescence Propriété optique Puits quantique Relaxation Saphir Semiconducteur III-V Valeur critique 6855J 7855 8107 8115K GaN InxAl1-xN
- Mot clé (en)
- III-V compound Confinement XRD Spectral line shift Electric field effects Layer thickness VPE Luminescence Atomic force microscopy MOVPE method Nanostructured materials Photoluminescence Optical properties Quantum wells Relaxation Sapphire III-V semiconductors Critical value
- Mot clé (es)
- Compuesto III-V Espesor capa Método MOVPE Valor crítico
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) / 001B60H55 Structure et morphologie de couches minces / 001B60H55J Structure et morphologie; épaisseur
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B70 Etat condense: structure electronique, proprietes electriques, magnetiques et optiques / 001B70H Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement / 001B70H55 Photoluminescence
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A07 Nanomatériaux et nanostructures : fabrication et caractèrisation / 001B80A07Z Divers
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15K Epitaxie en phase vapeur; croissance en phase vapeur
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 28465119
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2013.12.005 
https://dx.doi.org/10.1016/j.jcrysgro.2013.12.005
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