Influence of process parameters on atomic layer deposition of ZrO2 thin films from CpZr(NMe2)3 and H2O
- Auteur
- AARIK, Lauri1 ; ALLES, Harry1 ; AARIK, Jaan1 ; AIDLA, Aleks1 ; KAHRO, Tauno1 ; KUKLI, Kaupo1 2 ; NIINISTÖ, Jaakko2 ; MÄNDAR, Hugo1 ; TAMM, Aile1 ; RAMMULA, Raul1 ; SAMMELSELG, Väino1 3
[1] University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu, Estonia
[2] University of Helsinki, Department of Chemistry, P.O. Box 55, 00014 Helsinki, Finland
[3] University of Tartu, Institute of Chemistry, Ravila 14A, 50411 Tartu, Estonia - Source
Thin solid films. 2014, Vol 565, pp 37-44, 8 p ; ref : 41 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Domaine scientifique
- Crystallography; Metallurgy, welding; Condensed state physics
- Editeur
- Elsevier, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Atomic layer deposition Crystal structure Cyclopentadienyl Density Refractive index Zirconium oxide
- Mot clé (fr)
- Carbone Composition phase Couche mince Croissance cristalline en phase vapeur Dépendance température Effet température Epaisseur couche Indice réfraction Mécanisme croissance Méthode couche atomique Nucléation Oxyde de zirconium Procédé dépôt Propriété optique Réseau monoclinique Réseau quadratique Structure cristalline Taux croissance Temps réel 6855A 6855J 6855N 8115K Substrat graphène Substrat silicium ZrO2
- Mot clé (en)
- Carbon Phase composition Thin films Crystal growth from vapors Temperature dependence Temperature effects Layer thickness Refractive index Growth mechanism Atomic layer method Nucleation Zirconium oxide Deposition process Optical properties Monoclinic lattices Tetragonal lattices Crystal structure Growth rate Real time
- Mot clé (es)
- Composición fase Espesor capa Mecanismo crecimiento Método capa atómica Zirconio óxido Procedimiento revestimiento Tiempo real
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) / 001B60H55 Structure et morphologie de couches minces / 001B60H55J Structure et morphologie; épaisseur
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques / 001B60H Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) / 001B60H55 Structure et morphologie de couches minces / 001B60H55N Composition et identification des phases
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15A Théorie et modèles de la croissance de films
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B80 Domaines interdisciplinaires: science des materiaux; rheologie / 001B80A Science des matériaux / 001B80A15 Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie / 001B80A15K Epitaxie en phase vapeur; croissance en phase vapeur
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 28697398
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2014.06.052 
https://dx.doi.org/10.1016/j.tsf.2014.06.052
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