Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes
- Auteur
- DOGAN, Hulya1 ; ELAGOZ, Sezai2 3
[1] Department of Electrical-Electronics Engineering, Cumhuriyet University, Sivas 58140, Turkey
[2] Department of Nanotechnology Engineering, Cumhuriyet University, Sivas 58140, Turkey
[3] Nanotechnology Research Center, Cumhuriyet University, Sivas 58140, Turkey - Source
Physica. E, low-dimentional systems and nanostructures. 2014, Vol 63, pp 186-192, 7 p ; ref : 44 ref
- ISSN
- 1386-9477
- Domaine scientifique
- Crystallography; Electronics; Condensed state physics
- Editeur
- Elsevier, Amsterdam
- Pays de publication
- Netherlands
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Barrier inhomogeneities Current transport mechanism Schottky barrier height Series resistance
- Mot clé (fr)
- Barrière Schottky Caractéristique électrique Composé III-V Diode barrière Schottky Dépendance température Hauteur barrière Interface Loi normale Propriété transport Propriété électrique Semiconducteur III-V 8530H GaN
- Mot clé (en)
- Schottky barrier Electrical characteristic III-V compound Schottky barrier diode Temperature dependence Barrier height Interface Gaussian distribution Transport properties Electrical properties III-V semiconductors
- Mot clé (es)
- Barrera Schottky Característica eléctrica Compuesto III-V Diodo barrera Schottky Altura barrera Interfase Curva Gauss Propiedad transporte Propiedad eléctrica
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F01 Interfaces
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 28700955
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physe.2014.04.019 
https://dx.doi.org/10.1016/j.physe.2014.04.019
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